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Infineon FS900R08A2P2_B32 product image
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Infineon FS900R08A2P2_B32

Manufacturer
Infineon
MPN
FS900R08A2P2_B32
LCSC Part #
C535573
Packaging
-
Customer #
Key Attributes
1.546kW 550A 750V Single IGBTs
DatasheetInfineon FS900R08A2P2_B32
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QtyUnit Price(Reference Only)Total Amount
1+$ 903.1832$ 903.18
30+$ 859.9608$ 25798.82
Standard Packaging3/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
Packaging-
Pd - Power Dissipation1.546kW
Td(off)630ns
Td(on)390ns
Current - Collector(Ic)550A
Collector-Emitter Breakdown Voltage (Vces)750V
Reverse Transfer Capacitance (Cres)500pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))1.1V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)27.5mJ
Turn-On Energy (Eon)21mJ
Input Capacitance(Cies)105nF
Output Capacitance(Coes)-
Gate Charge(Qg)5.8uC
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