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Infineon AUIRL3705ZSTRL
| Manufacturer | |
| MPN | AUIRL3705ZSTRL |
| LCSC Part # | C533464 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 130W 55V 75A 3V 8mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | Infineon AUIRL3705ZSTRL |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.88nF | |
| Gate Charge(Qg) | 60nC@5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 75A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.88nF | |
| Gate Charge(Qg) | 60nC@5V | |
| Vgs | ±16V | |
| Type | N-Channel |
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Introduction
AI Translation
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device for automotive and a wide variety of other applications.
Features
AI Translation
- Logic level
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.1516 | $ 2.15 |
| 200+ | $ 0.8335 | $ 166.70 |
| 500+ | $ 0.8042 | $ 402.10 |
| 800+ | $ 0.7903 | $ 632.24 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.88nF | |
| Gate Charge(Qg) | 60nC@5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 75A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.88nF | |
| Gate Charge(Qg) | 60nC@5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device for automotive and a wide variety of other applications.
Features
AI Translation
- Logic level
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533464 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| VBL1615A | VBsemi Elec | Similar | TO-263(D2PAK) | 20 | $0.8152 $0.959 | ||
| SUB45N05-20L-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 10 | $0.7936 $0.9336 | ||
| BUK7618-55A-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 10 | $0.8260 $0.9717 | ||
| AUIRFZ44VZSTRR-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 20 | $0.8260 $0.9717 | ||
| AUIRFZ44ZSTRL-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 20 | $0.7936 $0.9336 |
5 more alternative parts.View all substitutes