Images for reference only
EDA ModelsEasyEDA
Infineon AUIRF3805STRL
| Manufacturer | |
| MPN | AUIRF3805STRL |
| LCSC Part # | C533259 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 300W 55V 160A 4V 3.3mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | Infineon AUIRF3805STRL |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.26nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.96nF | |
| Gate Charge(Qg) | 290nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.26nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.96nF | |
| Gate Charge(Qg) | 290nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.5408 | $ 3.54 |
| 200+ | $ 1.3707 | $ 274.14 |
| 500+ | $ 1.3228 | $ 661.40 |
| 800+ | $ 1.2981 | $ 1038.48 |
Standard Packaging800/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.26nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.96nF | |
| Gate Charge(Qg) | 290nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 1.26nF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF | |
| RDS(on) | 3.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.96nF | |
| Gate Charge(Qg) | 290nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 175℃ Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533259 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HY4008NA2B | HUAYI | TO-263-2L | 2 | $ 1.2492 | ||
| NCEP026N10D | NCE | TO-263 | 54 | $ 2.3379 | ||
| IRFS7534TRLPBF | Infineon | D2PAK | 236 | $ 2.1462 | ||
| HYG028N10NS1B | HUAYI | TO-263-2L | 795 | $ 1.4504 | ||
| KNB1906A | KIA Semicon Tech | TO-263-2 | 40 | $ 1.3875 | ||
| HY4008B | HUAYI | TO-263-2L | 1,356 | $1.0964 $1.2898 | ||
| IRFS3207TRLPBF | Infineon | D2PAK | 0 | $ 3.9219 | ||
| IRF2907ZSPBF | Infineon | D2PAK | 0 | $ 1.2036 | ||
| IRF2907ZSTRLPBF | Infineon | D2PAK | 0 | $ 2.4721 | ||
| NCEP035N12D | NCE | TO-263-2L | 0 | $ 2.1184 |