ElecSuper DMG2302UK-7-ES
| Manufacturer | ElecSuperAsian Brands |
| MPN | DMG2302UK-7-ES |
| LCSC Part # | C5224188 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 3.3A SOT-23 |
| Datasheet | ElecSuper DMG2302UK-7-ES |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 3.3A | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 0.9mW | |
| Reverse Transfer Capacitance (Crss) | 28pF | |
| RDS(on) | 45mΩ@4.5V;62mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 3.3A | |
| Ciss-Input Capacitance | 200pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 0.9mW | |
| Reverse Transfer Capacitance (Crss) | 28pF | |
| RDS(on) | 45mΩ@4.5V;62mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
DMG2302UK-7-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMG2302UK-7-ES is lead-free.
Features
AI Translation
- 20V, RDS(ON) = 45mΩ (typ.) at VGS = 4.5V
- RDS(ON) = 62mΩ (typ.) at VGS = 2.5V
- High-density cell design for low RDS(on)
- Halogen-free material
- Robust and reliable
- ESD protection
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 3.3A | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 0.9mW | |
| Reverse Transfer Capacitance (Crss) | 28pF | |
| RDS(on) | 45mΩ@4.5V;62mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ElecSuper | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 3.3A | |
| Ciss-Input Capacitance | 200pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 0.9mW | |
| Reverse Transfer Capacitance (Crss) | 28pF | |
| RDS(on) | 45mΩ@4.5V;62mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 3nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
DMG2302UK-7-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product DMG2302UK-7-ES is lead-free.
Features
AI Translation
- 20V, RDS(ON) = 45mΩ (typ.) at VGS = 4.5V
- RDS(ON) = 62mΩ (typ.) at VGS = 2.5V
- High-density cell design for low RDS(on)
- Halogen-free material
- Robust and reliable
- ESD protection
- Low leakage current
Applications
AI Translation
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C5224188 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



