onsemi NCV51561BBDWR2G

The NCV51561 are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCV51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. The NCV51561 offers other important protection functions such as independent under−voltage lockout for both gate drivers and a Dead Time adjustment function.

• 4.5 A Peak Source, 9 A Peak Sink Output Current Capability
• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver
• Independent UVLO Protections for Both Output Drivers
• Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds
• Common Mode Transient Immunity CMTI > 200 V/ns
• Propagation Delay Typical 36 ns with 5 ns Max Delay Matching per Channel, 5 ns Max Pulse−Width Distortion
• User Programmable Input Logic: Single or Dual−Input Modes via ANB, ENABLE or DISABLE Mode
• User Programmable Dead−Time
• AEC−Q100 Qualified for Automotive Application Requirements
• Isolation & Safety: 5 kVRMS Isolation for 1 Minute (per UL1577 Requirements) an 1500 V Peak Differential Voltage between Output Channels, 8000 VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements), CQC Certification per GB4943.1−2011, SGS FIMO Certification per IEC 62386−1
• These are Pb−Free Devices

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