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Modèles EDAEasyEDA
ST STP40NF10
| Fabricant | |
| Réf. Fab. | STP40NF10 |
| Réf. LCSC | C495254 |
| Condit. | TO-220 |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 100V 50A TO-220 |
| Fiche Technique | ST STP40NF10 |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83.7pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 62nC@50V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83.7pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 62nC@50V |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This N-channel 100 V Power MOSFET is the latest development of unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
Caractéristiques
Traduction par IA
- Exceptional dv/dt capability
- Low gate charge
- 100% avalanche tested
Applications
Traduction par IA
- Switching applications
En stock: 73
73 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 1.9902 | $ 1.99 |
| 10+ | $ 1.6994 | $ 16.99 |
| 50+ | $ 1.5386 | $ 76.93 |
| 100+ | $ 1.3582 | $ 135.82 |
| 500+ | $ 1.2786 | $ 639.30 |
| 1,000+ | $ 1.2413 | $ 1241.30 |
Boîtier Standard50/Full Tube | ||
Meilleur prix pour une plus grande quantité ?
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83.7pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 62nC@50V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 83.7pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 62nC@50V |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This N-channel 100 V Power MOSFET is the latest development of unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
Caractéristiques
Traduction par IA
- Exceptional dv/dt capability
- Low gate charge
- 100% avalanche tested
Applications
Traduction par IA
- Switching applications
C495254 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
| HSP0026 | HUASHUO | TO-220 | 85 | $ 0.49 | ||
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| IPP129N10NF2SAKMA1-JSM | JSMSEMI | TO-220-3 | 100 | $ 0.7691 | ||
| FDP150N10-JSM | JSMSEMI | TO-220-3 | 100 | $ 0.9613 | ||
| IPP16CN10NGHKSA1-JSM | JSMSEMI | TO-220-3 | 100 | $ 0.9613 | ||
| FDP3652-JSM | JSMSEMI | TO-220-3 | 90 | $ 0.8831 | ||
| BCB4115F | baocheng | TO-220 | 889 | $0.9346 $0.9837 | ||
| STP60NF10-JSM | JSMSEMI | TO-220-3 | 100 | $ 0.7691 | ||
| JSM080N10CGH | JSMSEMI | TO-220 | 498 | $ 0.5768 |