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EDA ModelsEasyEDA
onsemi HGTG40N60B3
| Manufacturer | |
| MPN | HGTG40N60B3 |
| LCSC Part # | C463280 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 290W 70A 600V TO-247-3 Single IGBTs RoHS |
| Datasheet | onsemi HGTG40N60B3 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 290W | |
| Td(off) | 170ns | |
| Td(on) | 47ns | |
| Current - Collector(Ic) | 70A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,40A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.4V;1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 800uJ;2mJ | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 250nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 290W | |
| Td(off) | 170ns | |
| Td(on) | 47ns | |
| Current - Collector(Ic) | 70A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,40A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.4V;1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 800uJ;2mJ | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 250nC |
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Introduction
AI Translation
This device is a MOS gate high-voltage switching device that combines the characteristics of MOSFETs and bipolar transistors. It features the high input impedance of a MOSFET and the low conduction-state losses of a bipolar transistor. The on-state voltage drop varies gradually between 25°C and 150°C.
Features
AI Translation
- 70 Amperes, 600 Volts, at T<sub>C</sub> = 25°C
- 600 Volt Switching Safe Operating Area
- Typical fall time: 100ns at T<sub>J</sub> = 150°C
- Short circuit withstand capability
- Low conduction losses
- The device is lead-free, halogen-free/bromine-free flame retardant and compliant with relevant specifications
Applications
AI Translation
- AC and DC motor control
- Power supplies
- Solenoid, relay, and contactor drivers
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.7448 | $ 3.74 |
| 10+ | $ 3.6622 | $ 36.62 |
| 30+ | $ 3.6086 | $ 108.26 |
| 100+ | $ 3.5535 | $ 355.35 |
Standard Packaging450/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 290W | |
| Td(off) | 170ns | |
| Td(on) | 47ns | |
| Current - Collector(Ic) | 70A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,40A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.4V;1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 800uJ;2mJ | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 250nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247-3 | |
| Pd - Power Dissipation | 290W | |
| Td(off) | 170ns | |
| Td(on) | 47ns | |
| Current - Collector(Ic) | 70A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | - | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,40A | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.4V;1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 800uJ;2mJ | |
| Turn-On Energy (Eon) | 1.05mJ | |
| Input Capacitance(Cies) | - | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 250nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is a MOS gate high-voltage switching device that combines the characteristics of MOSFETs and bipolar transistors. It features the high input impedance of a MOSFET and the low conduction-state losses of a bipolar transistor. The on-state voltage drop varies gradually between 25°C and 150°C.
Features
AI Translation
- 70 Amperes, 600 Volts, at T<sub>C</sub> = 25°C
- 600 Volt Switching Safe Operating Area
- Typical fall time: 100ns at T<sub>J</sub> = 150°C
- Short circuit withstand capability
- Low conduction losses
- The device is lead-free, halogen-free/bromine-free flame retardant and compliant with relevant specifications
Applications
AI Translation
- AC and DC motor control
- Power supplies
- Solenoid, relay, and contactor drivers
C463280 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MSG75T65FQC | MASPOWER | TO-247 | 23 | $ 5.4177 | ||
| NCE60TD65BT | NCE | TO-247 | 1 | $ 3.1339 | ||
| NCE60TD60BT | NCE | TO-247 | 241 | $ 2.1279 | ||
| IKW50N120CS7XKSA1 | Infineon | TO-247-3 | 4 | $ 12.4122 | ||
| FGY75T120SWD | onsemi | TO-247-3 | 0 | $ 8.2629 | ||
| IRGPS46160DPBF | Infineon | SUPER-247(TO-274AA) | 0 | $ 14.3497 | ||
| RGWX5TS65EHRC11 | ROHM | TO-247N | 0 | $ 5.4263 | ||
| FGY100T120SWD | onsemi | TO-247-3LD | 0 | $ 5.0377 | ||
| STGWA75M65DF2 | ST | TO-247-3 | 0 | $ 11.647 | ||
| AUIRGP4066D1-IR | Infineon | TO-247AC | 0 | $ 21.7163 |