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Infineon IRF540NLPBF
| Manufacturer | |
| MPN | IRF540NLPBF |
| LCSC Part # | C459969 |
| Packaging | TO-262 |
| Customer # | |
| Key Attributes | MOSFET 100V 33A TO-262 |
| Datasheet | Infineon IRF540NLPBF |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262 | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 44mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262 | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 44mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF540NL) is available for low - profile applications.
Features
- Advanced Process Technology
- Ultra Low On - Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262 | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 44mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262 | |
| Output Capacitance(Coss) | 250pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 44mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.96nF | |
| Gate Charge(Qg) | 71nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF540NL) is available for low - profile applications.
Features
- Advanced Process Technology
- Ultra Low On - Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead - Free
C459969 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |