- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
ST STS7NF60L
| Manufacturer | |
| MPN | STS7NF60L |
| LCSC Part # | C457488 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | 2.5W 60V 7.5A 1V 17mΩ@10V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS |
| Datasheet | ST STS7NF60L |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 7.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 34nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 7.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 34nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is the latest product of the unique "UniFeature™" stripe process. Transistors fabricated with this process achieve extremely high packing density, enabling low on-resistance, excellent avalanche characteristics, and fewer critical alignment steps, resulting in significantly improved manufacturing repeatability.
Features
AI Translation
- Typical R<sub>DS(on)</sub> = 0.017 Ω
- Standard footprint for automated SMT assembly
- Low-threshold drive
Applications
AI Translation
- DC motor drive
- DC-DC converter
- Battery management for mobile devices
- Power management for portable/desktop computers
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.6993 | $ 3.70 |
| 10+ | $ 3.649 | $ 36.49 |
| 30+ | $ 3.6165 | $ 108.50 |
| 100+ | $ 3.584 | $ 358.40 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 7.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 34nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | SO-8 | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 7.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 17mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.7nF | |
| Gate Charge(Qg) | 34nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is the latest product of the unique "UniFeature™" stripe process. Transistors fabricated with this process achieve extremely high packing density, enabling low on-resistance, excellent avalanche characteristics, and fewer critical alignment steps, resulting in significantly improved manufacturing repeatability.
Features
AI Translation
- Typical R<sub>DS(on)</sub> = 0.017 Ω
- Standard footprint for automated SMT assembly
- Low-threshold drive
Applications
AI Translation
- DC motor drive
- DC-DC converter
- Battery management for mobile devices
- Power management for portable/desktop computers
C457488 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DOS7N06 | DOINGTER | SOP-8 | 1,660 | $0.0647 $0.0703 | ||
| TPM60V8NS8-1 | TECH PUBLIC | SOP-8 | 524 | $ 0.4059 | ||
| VBA1615 | VBsemi Elec | SO-8 | 93 | $ 0.6065 | ||
| HSM0026 | HUASHUO | SOP-8 | 20 | $ 0.5613 | ||
| IRF7853TRPBF | Infineon | SO-8 | 430 | $ 0.9833 | ||
| FDS3672(UMW) | UMW | SOP-8 | 30 | $ 0.213 | ||
| IRF7854TRPBF | Infineon | SO-8 | 2,918 | $ 1.0784 | ||
| FDS3572 | onsemi | SOIC-8 | 0 | $ 0.8826 | ||
| IRF7853PBF | Infineon | SOP-8 | 0 | $ 1.1129 | ||
| FDS3572_NL | onsemi | SOIC-8 | 0 | $ 2.9919 |