MACOM MA4E2501L-1290

MA4E2501L - 1290 SURMOUNT™ Schottky diodes are silicon low-barrier devices fabricated using a patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon mesas that form diodes or via conductors, embedded in a glass dielectric that serves as a low-dispersion microstrip transmission medium. The combination of silicon and glass gives HMIC devices excellent loss and power dissipation characteristics in a low-profile, reliable package.

Schottky devices are ideal for circuits requiring the low parasitics of beam-lead devices combined with the superior mechanical properties of a chip. The SURMOUNT™ structure employs extremely low-resistance silicon vias to connect the Schottky contact to a metallized mounting pad on the bottom surface of the chip. These devices are reliable, repeatable, and offer a low-cost, high-performance alternative to conventional devices.

The multilayer metallization used in SURMOUNT™ Schottky junction fabrication incorporates a platinum diffusion barrier, enabling all devices to withstand a non-operating burn-in bake at 300°C for 16 hours.

The ultra-small "0201" footprint allows surface mounting and versatile polarity orientation.

The MA4E2501L - 1290 SURMOUNT™ low-barrier Schottky diodes are recommended for low-power microwave circuit applications up to Ku-band frequencies, including mixers, sub-harmonic mixers, detectors, and limiters.

• Ultra-low parasitic capacitance and inductance.
• Ultra-compact 0201 (600 x 300μm) package size.
• Surface-mountable for microwave circuits without wire bonding.
• Robust HMIC structure with polyimide scratch protection.
• Reliable multilayer metallization with diffusion barrier, 100% stabilization bake (300°C, 16 hours).