HXY MOSFET HSQ4425EYT1GE3
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | HSQ4425EYT1GE3 |
| LCSC Part # | C42401320 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 12A SOP-8 |
| Datasheet | HXY MOSFET HSQ4425EYT1GE3 |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 233pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 233pF | |
| Current - Continuous Drain(Id) | 12A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The HSQ4425EYT1GE3 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Package: SOP-8.
Features
AI Translation
- Drain-source voltage VDS = -30V, drain current ID = -12A
- On-resistance RDS(ON) < 15mΩ at gate-source voltage VGS = 10V
- P-channel MOSFET
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2308 | $ 1.23 |
| 10+ | $ 1.0178 | $ 10.18 |
| 30+ | $ 0.9014 | $ 27.04 |
| 100+ | $ 0.7687 | $ 76.87 |
| 500+ | $ 0.7097 | $ 354.85 |
| 1,000+ | $ 0.6834 | $ 683.40 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 233pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 233pF | |
| Current - Continuous Drain(Id) | 12A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.77nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The HSQ4425EYT1GE3 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. The device is suitable for battery protection or other switching applications. Package: SOP-8.
Features
AI Translation
- Drain-source voltage VDS = -30V, drain current ID = -12A
- On-resistance RDS(ON) < 15mΩ at gate-source voltage VGS = 10V
- P-channel MOSFET
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C42401320 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| RSS090P03FU6TB-HXY | HXY MOSFET | SOP-8 | 45 | $0.1431 $0.1506 | ||
| SI4425BDY-T1-GE3-HXY | HXY MOSFET | SOP-8 | 40 | $0.2539 $0.2672 | ||
| IRF7424GTRPBF-HXY | HXY MOSFET | SOP-8 | 40 | $0.1363 $0.1434 | ||
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| IRF9388TRPBF-HXY | HXY MOSFET | SOP-8 | 0 | $ 0.2074 |



