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onsemi FCH76N60NF
| Fabricant | |
| Réf. Fab. | FCH76N60NF |
| Réf. LCSC | C352871 |
| Condit. | TO-247-3 |
| Numéro Client | |
| Caract. clés | 600V 72.8A 5V 543W 38mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Fiche Technique | onsemi FCH76N60NF |
| Conformité RoHS | 3 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72.8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 543W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.045nF | |
| Gate Charge(Qg) | 300nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72.8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 543W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.045nF | |
| Gate Charge(Qg) | 300nC@10V | |
| Type | N-Channel |
Description
SupreMOS® MOSFETs are next-generation high-voltage super-junction (SJ) devices fabricated using a deep-trench fill process, distinguishing them from conventional SJ MOSFETs. This advanced technology combined with precise process control delivers the lowest specific on-resistance Rsp, superior switching performance, and exceptional ruggedness. SupreMOS MOSFETs are suited for high-frequency switching power converter applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications. The optimized body diode reverse recovery performance of SupreMOS FRFET® MOSFETs reduces component count and improves system reliability.
Caractéristiques
- R DS(on) = 28.7 mΩ (typ.) at V GS = 10 V, I D = 38 A
- Ultra-low gate charge (typ. Q g = 230 nC)
- Low effective output capacitance (typ. C oss(eff.) = 896 pF)
- 100% avalanche tested
- RoHS compliant
Applications
- Solar Inverters - AC-DC Power Supplies
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 16.0286 | $ 16.03 |
| 10+ | $ 15.2 | $ 152.00 |
| 30+ | $ 14.6964 | $ 440.89 |
| 90+ | $ 14.2724 | $ 1284.52 |
Boîtier Standard30/Full Tube | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72.8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 543W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.045nF | |
| Gate Charge(Qg) | 300nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72.8A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 543W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 11.045nF | |
| Gate Charge(Qg) | 300nC@10V | |
| Type | N-Channel |
Description
SupreMOS® MOSFETs are next-generation high-voltage super-junction (SJ) devices fabricated using a deep-trench fill process, distinguishing them from conventional SJ MOSFETs. This advanced technology combined with precise process control delivers the lowest specific on-resistance Rsp, superior switching performance, and exceptional ruggedness. SupreMOS MOSFETs are suited for high-frequency switching power converter applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications. The optimized body diode reverse recovery performance of SupreMOS FRFET® MOSFETs reduces component count and improves system reliability.
Caractéristiques
- R DS(on) = 28.7 mΩ (typ.) at V GS = 10 V, I D = 38 A
- Ultra-low gate charge (typ. Q g = 230 nC)
- Low effective output capacitance (typ. C oss(eff.) = 896 pF)
- 100% avalanche tested
- RoHS compliant
Applications
- Solar Inverters - AC-DC Power Supplies
C352871 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| ASW65R038EFD | ANHI | TO-247 | 46 | $ 5.6545 | ||
| MJQ80N65F | MIRACLE POWER | TO-247 | 28 | $5.6227 $5.9186 | ||
| FCH041N60F | onsemi | TO-247-3 | 1 | $ 5.7862 | ||
| SIHG018N60E-GE3 | VISHAY | TO-247AC | 2 | $ 28.9687 | ||
| WTM90N65FMP | WPMtek | TO-247 | 30 | $ 5.9095 | ||
| NTHL019N60S5F | onsemi | TO-247-3LD | 4 | $ 30.6063 | ||
| FCH041N65EF-F155 | onsemi | TO-247AC-3 | 0 | $ 18.9237 | ||
| FCH041N65F-F155 | onsemi | TO-247-3 | 0 | $ 5.5492 | ||
| SIHG73N60E-GE3 | VISHAY | TO-247AC | 0 | $ 8.2263 | ||
| SIHG026N60EF-GE3 | VISHAY | TO-247AC | 0 | $ 11.81 |