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RENESAS NE5550779A-T1-A product image
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RENESAS NE5550779A-T1-A

Manufacturer
RENESAS
MPN
NE5550779A-T1-A
LCSC Part #
C3288022
Packaging
SMD-4P
Customer #
Key Attributes
38V 2.1A SMD-4P Single FETs, MOSFETs RoHS
DatasheetRENESAS NE5550779A-T1-A
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerRENESAS
PackagingSMD-4P
Drain to Source Voltage38V
Current - Continuous Drain(Id)2.1A
Gate Threshold Voltage (Vgs(th))2.25V
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Features

AI Translation
  • High output power: typical output power Pout = 38.5 dBm (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
  • High power added efficiency: typical added efficiency ηadd = 66% (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
  • High linear gain: typical linear gain GL = 22.0 dB (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
  • High ESD immunity
  • Class AB power amplifier for VHF to UHF band

Applications

AI Translation
  • 150 MHz band radio system
  • 460 MHz band radio system
  • 900 MHz band radio system