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MICROCHIP APT10026JLL product image
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MICROCHIP APT10026JLL

Manufacturer
MICROCHIP
MPN
APT10026JLL
LCSC Part #
C3278310
Packaging
SOT-227B-4
Customer #
Key Attributes
280W 1kV 11A 1Ω@10V 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS
DatasheetMICROCHIP APT10026JLL
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingSOT-227B-4
Output Capacitance(Coss)390pF
Ciss-Input Capacitance3.66nF
Pd - Power Dissipation280W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage1kV
Current - Continuous Drain(Id)11A
Reverse Transfer Capacitance (Crss)200pF
RDS(on)1Ω@10V
Number1 N-channel
Gate Charge(Qg)225nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

Power MOS V is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V also achieves faster switching speeds through an optimized gate layout.

Features

AI Translation
  • Faster switching speed
  • 100% avalanche tested
  • Lower leakage current
  • Common TO-247 package