Infineon IPB052N04NG
| Fabricante | |
| N.º de pieza fab. | IPB052N04NG |
| Nº LCSC | C3276293 |
| Emb. | TO-263 |
| Número de Cliente | |
| Atrib. clave | N-channel, Current:70A, Voltage:40V |
| Hoja de Datos | Infineon IPB052N04NG |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 980pF | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 5.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 42nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 980pF | |
| Current - Continuous Drain(Id) | 70A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 5.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 42nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Fast-switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC-compliant, suitable for target applications
- N-channel, standard level
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-state resistance RDS(on)
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Aplicaciones
Traducción por IA
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, consumer electronics appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical devices not specifically intended for life support.
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.4416 | $ 0.44 |
| 200+ | $ 0.1709 | $ 34.18 |
| 500+ | $ 0.1649 | $ 82.45 |
| 1,000+ | $ 0.162 | $ 162.00 |
Encapsulado Estándar1000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 980pF | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 5.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 42nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 980pF | |
| Current - Continuous Drain(Id) | 70A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 5.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 42nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Fast-switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC-compliant, suitable for target applications
- N-channel, standard level
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-state resistance RDS(on)
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Aplicaciones
Traducción por IA
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, consumer electronics appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical devices not specifically intended for life support.
C3276293 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| CRSS052N08N | CRMICRO | TO-263 | 72,948 | $ 0.4786 | ||
| LSGE06R046HWB | LONTEN | TO-263 | 1 | $ 0.6699 | ||
| MS120N10FE | MASPOWER | TO-263 | 50 | $ 1.1779 | ||
| HYG060N08NS1B | HUAYI | TO-263-2 | 54 | $ 0.5004 | ||
| XRS120N10G | XNRUSEMI | TO-263 | 539 | $0.5637 $0.5933 | ||
| HYG065N07NS1B | HUAYI | TO-263-2L | 4,024 | $ 0.5015 | ||
| HY3708B | HUAYI | TO-263-2L | 8 | $ 0.9505 | ||
| STB130N6F7 | ST | D2PAK | 0 | $ 2.6319 | ||
| JMSH1004BE-13 | Jiangsu JieJie Microelectronics | TO-263-2 | 0 | $ 1.0042 | ||
| STB100N6F7 | ST | TO-263-2 | 0 | $ 2.8756 |

