Infineon DDB6U134N16RR

Fabricante	Infineon
N.º de pieza fab.	DDB6U134N16RR
Nº LCSC	C3198708
Emb.	-
Número de Cliente
Atrib. clave	500W 70A 1.6kV NPT (Non-Punch Through) IGBT Modules RoHS
Hoja de Datos	Infineon DDB6U134N16RR
Cumplimiento RoHS	1 documentos disponibles

Especificaciones del Producto

Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	500W
Td(on)	-
Current - Collector(Ic)	70A
Collector-Emitter Breakdown Voltage (Vces)	1.6kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.75V@15V,70A
Gate Charge(Qg)	-
Vce Saturation(VCE(sat))	2.05V;2.4V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	5.1nF@25V
Output Capacitance(Coes)	-

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	500W
Td(on)	-
Current - Collector(Ic)	70A
Collector-Emitter Breakdown Voltage (Vces)	1.6kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	NPT (Non-Punch Through)

Tipo	Descripción
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.75V@15V,70A
Gate Charge(Qg)	-
Vce Saturation(VCE(sat))	2.05V;2.4V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	5.1nF@25V
Output Capacitance(Coes)	-

En stock: 10

10 En stock, envío inmediato

Mínimo: 1Múltiplo: 1Unidad de venta: Piece

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Cant.	Prec. unit.	Importo total
1+	$ 51.334	$ 51.33
30+	$ 48.8775	$ 1466.33
Encapsulado Estándar10/Full Bag

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Todo

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	500W
Td(on)	-
Current - Collector(Ic)	70A
Collector-Emitter Breakdown Voltage (Vces)	1.6kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.75V@15V,70A
Gate Charge(Qg)	-
Vce Saturation(VCE(sat))	2.05V;2.4V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	5.1nF@25V
Output Capacitance(Coes)	-

Tipo	Descripción
Categoría	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Fabricante	Infineon
Emb.	-
Td(off)	-
Pd - Power Dissipation	500W
Td(on)	-
Current - Collector(Ic)	70A
Collector-Emitter Breakdown Voltage (Vces)	1.6kV
Reverse Transfer Capacitance (Cres)	-
IGBT Type	NPT (Non-Punch Through)

Tipo	Descripción
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.75V@15V,70A
Gate Charge(Qg)	-
Vce Saturation(VCE(sat))	2.05V;2.4V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	5.1nF@25V
Output Capacitance(Coes)	-