Infineon FF450R12ME3

Manufacturer	Infineon
MPN	FF450R12ME3
LCSC Part #	C3198689
Packaging	-
Customer #
Key Attributes	2.1kW 600A 1.2kV FS (Field Stop) IGBT Modules RoHS
Datasheet	Infineon FF450R12ME3
RoHS Compliance	1 documents available

Products Specifications

All

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufacturer	Infineon
Packaging	-
Td(off)	-
Pd - Power Dissipation	2.1kW
Td(on)	-
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.5nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.15V@15V,450A
Gate Charge(Qg)	4.3uC@15V
Vce Saturation(VCE(sat))	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+125℃
Input Capacitance(Cies)	32nF@25V
Output Capacitance(Coes)	-

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufacturer	Infineon
Packaging	-
Td(off)	-
Pd - Power Dissipation	2.1kW
Td(on)	-
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.5nF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.15V@15V,450A
Gate Charge(Qg)	4.3uC@15V
Vce Saturation(VCE(sat))	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+125℃
Input Capacitance(Cies)	32nF@25V
Output Capacitance(Coes)	-

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 212.4788	$ 212.48
200+	$ 198.9337	$ 39786.74
500+	$ 191.9435	$ 95971.75
1,000+	$ 188.4886	$ 188488.60
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All

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufacturer	Infineon
Packaging	-
Td(off)	-
Pd - Power Dissipation	2.1kW
Td(on)	-
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.5nF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.15V@15V,450A
Gate Charge(Qg)	4.3uC@15V
Vce Saturation(VCE(sat))	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+125℃
Input Capacitance(Cies)	32nF@25V
Output Capacitance(Coes)	-

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Manufacturer	Infineon
Packaging	-
Td(off)	-
Pd - Power Dissipation	2.1kW
Td(on)	-
Current - Collector(Ic)	600A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	1.5nF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.15V@15V,450A
Gate Charge(Qg)	4.3uC@15V
Vce Saturation(VCE(sat))	-
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	-
Turn-On Energy (Eon)	-
Operating Temperature	-40℃~+125℃
Input Capacitance(Cies)	32nF@25V
Output Capacitance(Coes)	-