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VBsemi Elec DMP2066LSS-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | DMP2066LSS-VB |
| LCSC Part # | C29778959 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 5.8A SO-8 |
| Datasheet | VBsemi Elec DMP2066LSS-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| RDS(on) | 33mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Compliant with RoHS Directive 2002/95/EC
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| RDS(on) | 33mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Compliant with RoHS Directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |