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MK MKDN256GCL-ZA

Hersteller
MKAsian Brands
Herst.-Teilenr.
MKDN256GCL-ZA
LCSC-Nr.
C2913169
Verp.
LGA-16(9x12.5)
Kundennummer
Hauptmerkm.
Nano SD NAND.LDPC
DatenblattMK MKDN256GCL-ZA
Vorrätig: 266
266 Ab Lager, sofort versandfertig
Minimum: 2Vielfaches: 2Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-PreisGesamtbetrag
2+$ 57.9372$ 55.0404$ 110.08
60+$ 53.0302$ 50.3787$ 3022.72
Standardgehäuse180/Full Tray
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Memory/Memory
HerstellerMK
Verp.LGA-16(9x12.5)
Operating Temperature-25℃~+85℃
FeaturesECC error correction function;Bad block management function
Memory Size256Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles-
Clock Frequency208MHz
Data Retention - TDR (Year)-
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current250uA
InterfaceSPI
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Beschreibung

KI-Übersetzung

MK Nano SD NAND is an embedded storage solution designed in a LGA package form. The operation of SD is similar to an SD card which is an Commercial Grade. Nano SD NAND consists of NAND flash and a high performance controller. 3.3V supply voltage is required for the NAND area (VCC). It is fully compliant with SD3.0 interface, which allows most of general CPU to utilize. Nano SD NAND has high performance, high quality and low power consumption. SD NAND family includes an on-board intelligent controller which manages interface protocols; security algorithms for content protection; data storage and retrieval, as well as Error Correction Code (ECC) algorithms; defect handling; power management; wear leveling and clock control. ECC:Error Correction code algorithms

Merkmale

KI-Übersetzung
  • Support up to 208MHz clock frequency C10, U3, V30, A2
  • Support SPI Mode
  • Support IO Voltage :1.8V / 3.3V
  • Built-in LDPC Engine and highly reliable NAND management mechanism
  • Advanced thermal management features to maximize performance and data protection at extended temperatures
  • Static, dynamic, and global wear leveling
  • Bad block management, intelligent garbage collection and support for interleaving, cache, and multi-plane programming
  • Read disturb management and dynamic data refresh
  • Best-in-class power fail management