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HUASHUO HSW6800
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSW6800 |
| LCSC Part # | C2828481 |
| Packaging | SOT-23-6L |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 4A SOT-23-6L |
| Datasheet | HUASHUO HSW6800 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23-6L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23-6L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSW6800 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSW6800 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high-cell-density trench technology
In-Stock: 3,025
3,025 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1576 | $ 0.79 |
| 50+ | $ 0.1326 | $ 6.63 |
| 150+ | $ 0.1202 | $ 18.03 |
| 500+ | $ 0.1108 | $ 55.40 |
| 3,000+ | $ 0.0918 | $ 275.40 |
| 6,000+ | $ 0.088 | $ 528.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23-6L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23-6L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 880pF | |
| Gate Charge(Qg) | 9.5nC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSW6800 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSW6800 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high-cell-density trench technology
C2828481 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSW6832 | HUASHUO | SOT-23-6L | 190 | $ 0.0848 |