LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
TI LM5113QDPRRQ1 product image
  • LM5113QDPRRQ1 thumbnail 1
  • LM5113QDPRRQ1 thumbnail 2
  • LM5113QDPRRQ1 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

TI LM5113QDPRRQ1

Manufacturer
TI
MPN
LM5113QDPRRQ1
LCSC Part #
C2677036
Packaging
WSON-10-EP(4x4)
Customer #
Key Attributes
Automotive half-bridge GaN driver
DatasheetTI LM5113QDPRRQ1
RoHS Compliance2 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingWSON-10-EP(4x4)
Input Logic Level - Low1.48V~1.76V
Low Level Delay Time28ns
High Level Delay Time26.5ns
Quiescent Current70uA
Input Logic Level - High1.89V~2.18V
Voltage - Supply4.5V~5.5V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)5A
Rise Time7ns
Fall Time3.5ns
FeaturesBuilt-in bootstrap diode
Current - Output High(IOH)1.2A
Load TypeMOSFET
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

LM5113-Q1 is a high-frequency, high- and low- side gate driver for enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half bridge configuration. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The LM5113-Q1 has split-gate outputs with strong sink capability, providing flexibility to adjust the turnon and turnoff strength independently. The LM5113-Q1 can operate up to several MHz, and is available in a standard 10-pin WSON package that contains an exposed pad to aid power dissipation.

Features

AI Translation
  • Qualified for automotive applications
  • Meets AEC-Q100 requirements with the following characteristics:
  • Device temperature grade 1: ambient operating temperature range –40°C to 125°C
  • Device HBM ESD classification level 1C
  • Device charged device model (CDM) ESD classification level C6
  • Separate high-side and low-side TTL logic inputs
  • 1.2A peak source current capability, 5A peak sink current capability
  • High-side floating bias voltage rail operating voltage up to 100VDC
  • Internal bootstrap supply voltage clamp
  • Split output for adjustable turn-on and turn-off slew rate control
  • 0.6Ω pull-down resistor, 2.1Ω pull-up resistor
  • Fast propagation time (typical 28ns)
  • Excellent propagation delay matching (typical 1.5ns)
  • Supply rail undervoltage lockout
  • Low power consumption

Applications

AI Translation
  • Mobile wireless chargers
  • Audio power amplifiers
  • Audio power current-fed push-pull converters
  • Half-bridge and full-bridge converters
  • Synchronous buck converters