ISSI IS43QR8K02S2A-083TBLI-TR

This 16Gb DDR4 SDRAM is a high-speed dynamic random access memory featuring a dual-die configuration, with each die containing 4 bank groups and each group comprising 4 banks. The DDR4 SDRAM employs an 8n prefetch architecture for high-speed operation, which, combined with the interface, enables the transfer of two data words per clock cycle on the I/O pins. Read and write operations on the DDR4 SDRAM are performed in burst mode, starting from a selected location and executing bursts of 8 (BL8) or 4 ("truncated") burst lengths in a programmed sequence. Operations begin with the registration of an ACTIVATE command, followed by a READ or WRITE command. Address bits registered concurrently with the ACTIVATE command select the bank and row to be activated, while address bits registered concurrently with the READ or WRITE command determine the starting column position for the burst operation, whether Auto Precharge is used, and the selection of BC4 or BL8 mode (if enabled in the mode register). Prior to normal operation, each die of the DDR4 SDRAM must be individually powered up and initialized in a predefined manner. The device contains two dies sharing address, data, and command I/Os; therefore, proper parametric timing, signal and command sequences, and compatible operating states must be ensured to prevent bus contention or malfunction.

• Dual-rank design: independent chip select (CS#), on-die termination (ODT), and clock enable (CKE) signals per rank
• Standard voltage: VDD = VDDQ = 1.2V, VPP = 2.5V
• High-speed data transfer rate, system frequency up to 2400Mbps
• Data integrity:
  • Automatic self-refresh (ASR) via DRAM built-in temperature sensor
  • Auto refresh and self-refresh modes
• DRAM access bandwidth:
  • Per-bank group independent I/O gating architecture
  • Self-refresh abort
  • Fine granularity refresh
• Signal synchronization:
  • Write leveling calibration via mode register (MR) settings
  • Read leveling calibration via multi-purpose register (MPR)
• Reliability and error handling:
  • Command/address parity
  • Data bus write cyclic redundancy check (CRC)
  • Multi-purpose register (MPR) readout
  • Boundary scan
• Speed grade (CL - TRCD - TRP): 2400Mbps/17 - 17 - 17 (-083T)
• Programmable features:
  • Output driver impedance (34/48)
  • CAS write latency (9/10/11/12/14/16/18/20)
  • Additive latency (0/CL - 1/CL - 2)
  • CS# to command address (3/4/5/6/8)
  • Burst type (sequential/interleaved)
  • Write recovery time (10/12/14/16/18/20/24)
  • Read preamble (1T/2T)
  • Write preamble (1T/2T)
  • Burst length (BL8/BC4/BC4 or 8 on-the-fly)
• Signal integrity:
  • Internal VREFDQ training
  • Read preamble training
  • Gear-down mode
  • Per-DRAM addressability
  • Configurable drive strength (DS) for system compatibility
  • Configurable ODT
  • Data bus inversion (DBI) for write operations
  • ZQ calibration via external ZQ pad (240Ω ± 1%) for DS/ODT impedance accuracy
• Power saving and efficiency:
  • Pseudo open drain (POD) with VDDQ termination
  • Command/address latency (CAL)
  • Maximum power saving mode
  • Low power auto self-refresh (LPASR)
• Operating temperature:
  • Commercial grade (Tc = 0°C ~ +95°C)
  • Industrial grade (Tc = -40°C ~ +95°C)
  • Automotive A1 grade (Tc = -40°C ~ +95°C)
  • Automotive A2 grade (Tc = -40°C ~ +105°C)
  • Automotive A3 grade (Tc = -40°C ~ +125°C)
• Package: 78-ball BGA (10mm × 14mm, 0.8mm ball pitch)