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Modelli EDAEasyEDA
VBsemi Elec SPD07N20G-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | SPD07N20G-VB |
| Cod. LCSC | C879073 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 200V 10A TO-252 |
| Scheda Tecnica | VBsemi Elec SPD07N20G-VB |
| Parti alternative | 20 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Trench power MOSFET
- Junction temperature 175 °C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applicazioni
Traduzione AI
- Primary-side switch
Disponibile: 28
28 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.6865$ 0.5836 | $ 0.58 |
| 10+ | $ 0.5589$ 0.4751 | $ 4.75 |
| 30+ | $ 0.4935$ 0.4195 | $ 12.59 |
| 100+ | $ 0.4297$ 0.3653 | $ 36.53 |
| 500+ | $ 0.3923$ 0.3335 | $ 166.75 |
| 1,000+ | $ 0.3721$ 0.3163 | $ 316.30 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 96W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 245mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.8nF | |
| Gate Charge(Qg) | 34nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Trench power MOSFET
- Junction temperature 175 °C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Applicazioni
Traduzione AI
- Primary-side switch
C879073 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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| IRFR9N20DTRPBF-VB | VBsemi Elec | TO-252 | 14 | $ 0.6982 | ||
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| FQD10N20LTM-VB | VBsemi Elec | TO-252 | 3 | $0.5952 $0.7002 |