Wuxi China Resources Huajing Microelectronics CS10N50FA9R
| Manufacturer | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| MPN | CS10N50FA9R |
| LCSC Part # | C7428335 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 500V 10A 2V 40W 500mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs |
| Datasheet | Wuxi China Resources Huajing Microelectronics CS10N50FA9R |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 154pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.4pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 154pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.4pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
CS10N50F A9R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for a wide range of power switching circuits, enabling system miniaturization and higher efficiency. It is available in a TO-220F package and is RoHS compliant.
Features
- Fast switching
- Low on-resistance (Rdson ≤ 0.75Ω)
- Low gate charge (typical: 32nC)
- Low reverse transfer capacitance (typical: 8.4pF)
- 100% single-pulse avalanche energy tested
Applications
- Power switching circuits for adapters and chargers.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7068 | $ 0.71 |
| 10+ | $ 0.6028 | $ 6.03 |
| 50+ | $ 0.5492 | $ 27.46 |
| 100+ | $ 0.4972 | $ 49.72 |
| 500+ | $ 0.4663 | $ 233.15 |
| 1,000+ | $ 0.4501 | $ 450.10 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 154pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.4pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 154pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.4pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
CS10N50F A9R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces on-state losses, improves switching performance, and enhances avalanche energy capability. This transistor is suitable for a wide range of power switching circuits, enabling system miniaturization and higher efficiency. It is available in a TO-220F package and is RoHS compliant.
Features
- Fast switching
- Low on-resistance (Rdson ≤ 0.75Ω)
- Low gate charge (typical: 32nC)
- Low reverse transfer capacitance (typical: 8.4pF)
- 100% single-pulse avalanche energy tested
Applications
- Power switching circuits for adapters and chargers.
C7428335 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| CS10N70FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 9 | $ 0.7555 | ||
| CS12N60FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 1,000 | $ 0.6146 | ||
| CS10N60FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F-3 | 0 | $ 0.7604 | ||
| CS10N65FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 0 | $ 0.944 | ||
| CS12N65FA9R | Wuxi China Resources Huajing Microelectronics | Similar | TO-220F | 0 | $ 0.9407 |



