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VISHAY IRF9Z10PBF
| Manufacturer | |
| MPN | IRF9Z10PBF |
| LCSC Part # | C727786 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | 43W 60V 4.7A 2V 500mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY IRF9Z10PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
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Introduction
AI Translation
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB a broadly recognized standard throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-Channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
In-Stock: 53
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.1242 | $ 3.12 |
| 10+ | $ 2.7554 | $ 27.55 |
| 50+ | $ 2.5247 | $ 126.24 |
| 100+ | $ 2.2875 | $ 228.75 |
| 500+ | $ 2.1803 | $ 1090.15 |
| 1,000+ | $ 2.1348 | $ 2134.80 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 170pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB a broadly recognized standard throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-Channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
C727786 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HL40P10T | HL | TO-220 | 1,195 | $ 0.4067 | ||
| MPG30P10P | Minos | TO-220 | 105 | $ 0.4376 | ||
| FQPF17P06-VB | VBsemi Elec | TO-220 | 7 | $ 0.6494 | ||
| IRF9Z24PBF | VISHAY | TO-220AB | 15 | $1.0808 $1.2866 | ||
| IRF9Z14PBF | VISHAY | TO-220AB-3 | 0 | $ 0.7574 | ||
| IRF9Z14PBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.2265 | ||
| IRF9Z10PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.8549 | ||
| SFP9Z14 | onsemi | TO-220-3 | 0 | $ 0.3202 | ||
| FTP02P15G | ARK micro | TO-220AB | 0 | $1.9494 $2.052 | ||
| STP10P6F6 | ST | TO-220 | 0 | $ 1.8667 |