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onsemi FDC3601N
| Manufacturer | |
| MPN | FDC3601N |
| LCSC Part # | C719810 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | 100V 1A 500mΩ@10V 960mW 2 N-Channel SuperSOT-6 FET, MOSFET Arrays RoHS |
| Datasheet | onsemi FDC3601N |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A | |
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A |
| Type | Description | |
|---|---|---|
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These 100V N-channel MOSFETs are manufactured using onsemi's advanced PowerTrench process, which has been specially optimized to reduce on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to achieve superior power dissipation in an extremely small footprint, making them ideal for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- 1.0 A, 100 V. RDS(ON) = 500 mΩ at VGS = 10 V
- RDS(ON) = 550 mΩ at VGS = 6.0 V
- Low gate charge (typical 3.7 nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: 72% smaller footprint than standard SO-8; low profile (1 mm thickness)
Applications
AI Translation
- Load switch
- Battery protection
- Power management
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A | |
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 1pF | |
| Ciss-Input Capacitance | 153pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 5pF | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 1A |
| Type | Description | |
|---|---|---|
| RDS(on) | 500mΩ@10V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.7nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These 100V N-channel MOSFETs are manufactured using onsemi's advanced PowerTrench process, which has been specially optimized to reduce on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to achieve superior power dissipation in an extremely small footprint, making them ideal for applications where larger and more expensive SO-8 and TSSOP-8 packages are impractical.
Features
AI Translation
- 1.0 A, 100 V. RDS(ON) = 500 mΩ at VGS = 10 V
- RDS(ON) = 550 mΩ at VGS = 6.0 V
- Low gate charge (typical 3.7 nC)
- Fast switching speed
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: 72% smaller footprint than standard SO-8; low profile (1 mm thickness)
Applications
AI Translation
- Load switch
- Battery protection
- Power management
C719810 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |