Shanghai Super Semiconductor SSP1991
| Manufacturer | |
| MPN | SSP1991 |
| LCSC Part # | C718952 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 120A TO-220 |
| Datasheet | Shanghai Super Semiconductor SSP1991 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shanghai Super Semiconductor | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 223W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shanghai Super Semiconductor | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 223W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SSP1991 MOSFET uses advanced trench MOSFET technology, that is uniquely optimized to provide the most efficient high frequency switching performance and low on-state resistance. This device is ideal for DC/DC converters and general purpose applications.
Features
AI Translation
- VDS
- ID (at Vgs = 10V)
- RDS(on) (at Vgs = 10V)
- 100% avalanche tested
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.9558 | $ 0.96 |
| 10+ | $ 0.7844 | $ 7.84 |
| 30+ | $ 0.6907 | $ 20.72 |
| 100+ | $ 0.5843 | $ 58.43 |
| 500+ | $ 0.5367 | $ 268.35 |
| 1,000+ | $ 0.5145 | $ 514.50 |
Standard Packaging1000/Full Box | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shanghai Super Semiconductor | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 223W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Shanghai Super Semiconductor | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 223W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 3.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.75nF | |
| Gate Charge(Qg) | 100nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SSP1991 MOSFET uses advanced trench MOSFET technology, that is uniquely optimized to provide the most efficient high frequency switching performance and low on-state resistance. This device is ideal for DC/DC converters and general purpose applications.
Features
AI Translation
- VDS
- ID (at Vgs = 10V)
- RDS(on) (at Vgs = 10V)
- 100% avalanche tested
C718952 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
