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GeneSiC Semiconductor MBRT200150
| Manufacturer | |
| MPN | MBRT200150 |
| LCSC Part # | C6987384 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1 Pair Common Cathode 200A 150V 880mV@100A Diode Arrays RoHS |
| Datasheet | GeneSiC Semiconductor MBRT200150 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 1mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 1mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@100A |
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Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 150 V ~ 200 V
- Isolated package
- Electrically isolated baseplate
- Insensitive to ESD
- Triple tower package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 228.5237 | $ 228.52 |
| 200+ | $ 91.1832 | $ 18236.64 |
| 480+ | $ 88.1356 | $ 42305.09 |
| 1,000+ | $ 86.6309 | $ 86630.90 |
Standard Packaging40/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 1mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@100A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 1.5kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 200A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 1mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@100A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRRM) range: 150 V ~ 200 V
- Isolated package
- Electrically isolated baseplate
- Insensitive to ESD
- Triple tower package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |