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WUXI UNIGROUP MICRO TTD120N03AT
| Fabricant | WUXI UNIGROUP MICROAsian Brands |
| Réf. Fab. | TTD120N03AT |
| Réf. LCSC | C691675 |
| Condit. | TO-252-2 |
| Numéro Client | |
| Caract. clés | 120W 30V 120A 1V 2.6mΩ@10V 1 N-channel N-Channel TO-252-2 Single FETs, MOSFETs |
| Fiche Technique | WUXI UNIGROUP MICRO TTD120N03AT |
| Pièces alternatives | 1 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | WUXI UNIGROUP MICRO | |
| Condit. | TO-252-2 | |
| Output Capacitance(Coss) | 465pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.782nF | |
| Gate Charge(Qg) | 89nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | WUXI UNIGROUP MICRO | |
| Condit. | TO-252-2 | |
| Output Capacitance(Coss) | 465pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.782nF | |
| Gate Charge(Qg) | 89nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
Super Junction power MOSFETs represent a revolutionary technology in high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. SJ MOSFETs are cost-performance-optimized products suited for cost-sensitive applications in consumer and lighting markets.
Caractéristiques
Traduction par IA
- Trench power MOSFET technology
- Low R<sub>DS(ON)</sub>
- Low gate charge
- Optimized for fast switching applications
Applications
Traduction par IA
- Synchronous rectification in DC/DC and AC/DC converters
- Isolated DC/DC converters for telecom and industrial applications
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.2526 | $ 0.25 |
| 10+ | $ 0.2493 | $ 2.49 |
| 30+ | $ 0.2472 | $ 7.42 |
| 100+ | $ 0.245 | $ 24.50 |
Boîtier Standard2500/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | WUXI UNIGROUP MICRO | |
| Condit. | TO-252-2 | |
| Output Capacitance(Coss) | 465pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.782nF | |
| Gate Charge(Qg) | 89nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | WUXI UNIGROUP MICRO | |
| Condit. | TO-252-2 | |
| Output Capacitance(Coss) | 465pF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 120A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.782nF | |
| Gate Charge(Qg) | 89nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
Super Junction power MOSFETs represent a revolutionary technology in high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. SJ MOSFETs are cost-performance-optimized products suited for cost-sensitive applications in consumer and lighting markets.
Caractéristiques
Traduction par IA
- Trench power MOSFET technology
- Low R<sub>DS(ON)</sub>
- Low gate charge
- Optimized for fast switching applications
Applications
Traduction par IA
- Synchronous rectification in DC/DC and AC/DC converters
- Isolated DC/DC converters for telecom and industrial applications
C691675 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| TTD160N03GT | WUXI UNIGROUP MICRO | TO-252-2 | 0 | $ 0.3315 |