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ADI ADRF5549BCPZN-RL product image
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ADI ADRF5549BCPZN-RL

Manufacturer
ADI
MPN
ADRF5549BCPZN-RL
LCSC Part #
C659633
Packaging
QFN-40-EP(6x6)
Customer #
Key Attributes
Dual-Channel 1.8 GHz to 2.8 GHz RF Receiver Front End
DatasheetADI ADRF5549BCPZN-RL
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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QtyUnit Price(Reference Only)Total Amount
1+$ 20.593$ 20.59
200+$ 7.9705$ 1594.10
500+$ 7.6896$ 3844.80
1,000+$ 7.5507$ 7550.70
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryRF and Wireless/RF Front End (LNA + PA)
ManufacturerADI
PackagingQFN-40-EP(6x6)
FeaturesIntegrated low noise amplifier;Integrated RF switch
Operating Temperature-40℃~+105℃
Applications-
Voltage - Supply-
Frequency Range1.8GHz~2.8GHz
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Introduction

AI Translation

The ADRF5549 is a dual-channel, integrated, RF front-end multichip module designed for time division duplexing (TDD) applications that operates from 1.8 GHz to 2.8 GHz. The ADRF5549 is configured in dual channels with a cascading, two-stage, low noise amplifier (LNA) and a high power, silicon single-pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.4 dB and a high gain of 35 dB with an output third-order intercept point (OIP3) of 32 dBm typical. In low gain mode, one stage of the two-stage LNA is in bypass mode providing 17 dB of gain at a lower current of 35 mA. In power-down mode, the LNAs are turned off, and the device draws 12 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.6 dB and handles a long-term evolution (LTE) full lifetime average (9 dB peak to average ratio (PAR)) of 40 dBm and 43 dBm for a 9 dB PAR LTE single event <10 sec average. The device comes in a RoHS-compliant, compact, 6 mmx6 mm, 40-lead, lead frame chip-scale package (LFCSP).

Features

AI Translation
  • Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch
  • On-chip bias and matching
  • Single-supply operation
  • Gain: High gain mode: 35 dB typical at 2.3 GHz; Low gain mode: 17 dB typical at 2.3 GHz
  • Low noise figure: High gain mode: 1.4 dB typical at 2.3 GHz; Low gain mode: 1.4 dB typical at 2.3 GHz
  • High isolation: Between RxOUT-ChA and RxOUT-ChB: 50 dB typical; Between TERM-ChA and TERM-ChB: 62 dB typical
  • Low insertion loss: 0.6 dB typical at 2.3 GHz
  • High power handling at T (overline casz) = 105 ℃: Full lifetime LTE average power (9 dB PAR): 40 dBm; Single event (zeta < 10 sec operation) LTE average power (9 dB PAR): 43 dBm
  • High OIP3: 32 dBm typical
  • Power-down mode and low gain mode for LNA
  • Low supply current: High gain mode: 85 mA typical at 5V; Low gain mode: 35 mA typical at 5 V; Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 6 mmx6 mm, 40-lead LFCSP

Applications

AI Translation
  • Wireless Infrastructure
  • TDD massive multiple input and multiple output (MIMO) and active antenna systems
  • TDD-based communication systems