Images for reference only
EDA ModelsEasyEDA
micron M58LR256KB70ZQ5E
| Manufacturer | |
| MPN | M58LR256KB70ZQ5E |
| LCSC Part # | C6586166 |
| Packaging | TFBGA-88(8x10) |
| Customer # | |
| Key Attributes | 256Mbit 1.7V~2V 66MHz Parallel TFBGA-88(8x10) Memory RoHS |
| Datasheet | micron M58LR256KB70ZQ5E |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-88(8x10) | |
| Operating Temperature | -30℃~+85℃ | |
| Features | Hardware write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 70ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-88(8x10) | |
| Operating Temperature | -30℃~+85℃ | |
| Features | Hardware write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 70ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Supply voltage: VDD = 1.7 V ~ 2.0 V for program, erase, and read; I/O buffer VDDQ = 1.7 V ~ 2.0 V; VPP = 9 V for fast program
- Synchronous/asynchronous read: synchronous burst read mode at 54 MHz, 66 MHz; asynchronous page read mode; random access time 70 ns, 85 ns
- Synchronous burst read suspend
- Program time: typical word program time 2.5 μs using buffered enhanced factory program command
- Memory organization: 8 Mbit bank for M58LR128KT/B, 16 Mbit bank for M58LR256KT/B; parameter blocks (top or bottom location)
- Dual operation: program/erase in one bank while reading from other banks; no latency between read and write operations
- Block locking: all blocks locked at power-up; any block combination lockable with zero latency; block locking via WP (overline); absolute write protection when VPP = VSS
- Security features: 64-bit unique device number; 2112-bit user-programmable OTP cells
- CFI: 100,000 program/erase cycles per block
- Electronic signature: manufacturer code 20h; M58LR128KT top device code 88C4h, M58LR256KT 880Dh; M58LR128KB bottom device code 88C5h, M58LR256KB 880Eh
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 10.7056 | $ 10.71 |
| 253+ | $ 4.2723 | $ 1080.89 |
| 506+ | $ 4.1298 | $ 2089.68 |
| 1,012+ | $ 4.0586 | $ 4107.30 |
Standard Packaging253/Full Tray | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-88(8x10) | |
| Operating Temperature | -30℃~+85℃ | |
| Features | Hardware write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 70ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-88(8x10) | |
| Operating Temperature | -30℃~+85℃ | |
| Features | Hardware write protection;Absolute write protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 66MHz | |
| Data Retention - TDR (Year) | - | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 70ns | |
| Standby Supply Current | - | |
| Interface | Parallel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Supply voltage: VDD = 1.7 V ~ 2.0 V for program, erase, and read; I/O buffer VDDQ = 1.7 V ~ 2.0 V; VPP = 9 V for fast program
- Synchronous/asynchronous read: synchronous burst read mode at 54 MHz, 66 MHz; asynchronous page read mode; random access time 70 ns, 85 ns
- Synchronous burst read suspend
- Program time: typical word program time 2.5 μs using buffered enhanced factory program command
- Memory organization: 8 Mbit bank for M58LR128KT/B, 16 Mbit bank for M58LR256KT/B; parameter blocks (top or bottom location)
- Dual operation: program/erase in one bank while reading from other banks; no latency between read and write operations
- Block locking: all blocks locked at power-up; any block combination lockable with zero latency; block locking via WP (overline); absolute write protection when VPP = VSS
- Security features: 64-bit unique device number; 2112-bit user-programmable OTP cells
- CFI: 100,000 program/erase cycles per block
- Electronic signature: manufacturer code 20h; M58LR128KT top device code 88C4h, M58LR256KT 880Dh; M58LR128KB bottom device code 88C5h, M58LR256KB 880Eh
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| M58LR256KT70ZQ5E | micron | TFBGA-88(8x10) | 0 | $ 10.7743 | ||
| M58LR256KB70ZQ5Z | micron | FBGA-88(8x10) | 0 | $ 11.9684 |