Infineon S25HS01GTFAMHM013

This product uses 45nm technology, with each memory array cell storing two data bits. Sector architecture options include uniform and hybrid. The hybrid architecture offers two configurations: Configuration 1 address space contains thirty-two 4KB sectors located at the top or bottom, with the remaining sectors at 256KB; Configuration 2 address space contains thirty-two 4KB sectors evenly distributed at the top and bottom, with the remaining sectors at 256KB. The page program buffer is 256 or 512 bytes. The security silicon array size is 1024 bytes. Interface support includes Quad SPI, Dual SPI, and SPI. Quad SPI supports 1S-1S-4S, 1S-4S-4S, 1S-4D-4D, 4S-4S-4S, and 4S-4D-4D protocols, with SDR mode operating at up to 83MBps and DDR mode at up to 102MBps. Dual SPI supports the 1S-2S-2S protocol, with SDR mode operating at up to 41.5MBps. SPI supports the 1S-1S-1S protocol, with SDR mode operating at up to 21MBps.

• Security Features: Functional safety with high endurance and long retention time partitions. Data integrity CRC detects memory array errors. Built-in ECC corrects single-bit errors and detects double-bit errors in memory array data. Erase status indicator shows whether power was interrupted during erase.
• Protection Features: Legacy block protection. Advanced sector protection based on individual memory array sectors.
• Immediate memory array access after power-up.
• Hardware reset via CS# signal, dedicated RESET# pin, or DQ3_RESET# pin.
• Serial flash discoverable parameters describing device capabilities and characteristics.
• Device identification, manufacturer identification, and identification information.
• Data Integrity: Minimum program-erase cycles of 640,000 for 256Mb device main array; 1,280,000 for 512Mb device main array; 2,560,000 for 1Gb device main array. Minimum 300,000 program-erase cycles for 4KB sectors across all devices. Minimum data retention of 25 years.
• Operating Voltage: 1.7V to 2.0V, or 2.7V to 3.6V.
• Operating Temperature Range: Industrial -40℃ to +85℃; Industrial Plus -40℃ to +105℃; Automotive AEC-Q100 Grade 3 -40℃ to +85℃; Automotive AEC-Q100 Grade 2 -40℃ to +105℃; Automotive AEC-Q100 Grade 1 -40℃ to +125℃.
• Package: 256Mb and 512Mb devices available in 24-ball BGA, 16-pin SOIC, and 8-contact WSON; 1Gb devices available in 24-ball BGA and 16-pin SOIC.