Littelfuse IXFX120N20
| Fabricante | |
| Cód. da peça | IXFX120N20 |
| Nº LCSC | C5658175 |
| Emb. | - |
| Número do Cliente | |
| Atrib. princ. | 200V 120A 560W 1 N-channel Single FETs, MOSFETs RoHS |
| Folha de Dados | Littelfuse IXFX120N20 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Littelfuse | |
| Emb. | - | |
| Drain to Source Voltage | 200V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Pd - Power Dissipation | 560W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.1nF | |
| Gate Charge(Qg) | 50nC@10V |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Littelfuse | |
| Emb. | - | |
| Drain to Source Voltage | 200V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 560W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.1nF | |
| Gate Charge(Qg) | 50nC@10V |
Descrição
The third-generation power MOSFET offers designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional isolation hardware in commercial-industrial applications. The molding compound used provides high isolation capability and low thermal resistance between the package and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be secured to a heatsink using a single clip or a single screw.
Recursos
- Industry-standard package
- Low on-resistance (R DS(on)) HDMOS™ process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Easy to drive and protect
- Fast intrinsic rectifier
Aplicações
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode Power Supplies
- DC Choppers
- AC Motor Control
- Temperature and Lighting Control
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 4.1142 | $ 4.11 |
| 210+ | $ 1.6429 | $ 345.01 |
| 510+ | $ 1.5873 | $ 809.52 |
| 990+ | $ 1.5603 | $ 1544.70 |
Encapsulamento Padrão30/Full Tube | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Littelfuse | |
| Emb. | - | |
| Drain to Source Voltage | 200V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Pd - Power Dissipation | 560W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.1nF | |
| Gate Charge(Qg) | 50nC@10V |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Littelfuse | |
| Emb. | - | |
| Drain to Source Voltage | 200V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 120A |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 560W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.1nF | |
| Gate Charge(Qg) | 50nC@10V |
Descrição
The third-generation power MOSFET offers designers the best combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional isolation hardware in commercial-industrial applications. The molding compound used provides high isolation capability and low thermal resistance between the package and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be secured to a heatsink using a single clip or a single screw.
Recursos
- Industry-standard package
- Low on-resistance (R DS(on)) HDMOS™ process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Easy to drive and protect
- Fast intrinsic rectifier
Aplicações
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode Power Supplies
- DC Choppers
- AC Motor Control
- Temperature and Lighting Control
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |