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GOODWORK 5N06
| Manufacturer | GOODWORKAsian Brands |
| MPN | 5N06 |
| LCSC Part # | C54563497 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | 60V 5A 36mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs |
| Datasheet | GOODWORK 5N06 |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 109pF | |
| Ciss-Input Capacitance | 1.231nF | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.74nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 109pF | |
| Ciss-Input Capacitance | 1.231nF |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.74nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Features
AI Translation
- Advanced high cell density trench technology
- Ultra-low gate charge
- Green/eco-friendly device available
- SOT223 pin configuration
- VDSS: 60 V
- ID: 5.0 A
- RDS(ON): 36mΩ
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 109pF | |
| Ciss-Input Capacitance | 1.231nF | |
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.74nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 109pF | |
| Ciss-Input Capacitance | 1.231nF |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | 17pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11.74nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Advanced high cell density trench technology
- Ultra-low gate charge
- Green/eco-friendly device available
- SOT223 pin configuration
- VDSS: 60 V
- ID: 5.0 A
- RDS(ON): 36mΩ
C54563497 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |