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Infineon IRG4IBC10UDPBF
| Manufacturer | |
| MPN | IRG4IBC10UDPBF |
| LCSC Part # | C538087 |
| Packaging | TO-220AB-3 |
| Customer # | |
| Key Attributes | 25W 6.8A 600V TO-220AB-3 Single IGBTs |
| Datasheet | Infineon IRG4IBC10UDPBF |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB-3 | |
| Td(off) | 87ns | |
| Pd - Power Dissipation | 25W | |
| Td(on) | 40ns | |
| Current - Collector(Ic) | 6.8A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 3.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | 28ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | 270pF | |
| Gate Charge(Qg) | 15nC@400V | |
| Output Capacitance(Coes) | 21pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB-3 | |
| Td(off) | 87ns | |
| Pd - Power Dissipation | 25W | |
| Td(on) | 40ns | |
| Current - Collector(Ic) | 6.8A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 3.5pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | 28ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | 270pF | |
| Gate Charge(Qg) | 15nC@400V | |
| Output Capacitance(Coes) | 21pF |
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Features
AI Translation
- Ultra-fast characteristics: optimized for hard-switching operation up to 80kHz and resonant mode >200kHz
- 4th generation IGBT design: tighter parameter distribution and higher efficiency vs. previous generations
- Co-packaged IGBT with HEXFRED ultra-fast, ultra-soft recovery anti-parallel diode: suitable for bridge configurations
- Industry-standard TO-220 Full-Pak package
- Lead-free
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.0388 | $ 1.04 |
| 200+ | $ 0.4029 | $ 80.58 |
| 500+ | $ 0.389 | $ 194.50 |
| 1,000+ | $ 0.3813 | $ 381.30 |
Standard Packaging2000/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB-3 | |
| Td(off) | 87ns | |
| Pd - Power Dissipation | 25W | |
| Td(on) | 40ns | |
| Current - Collector(Ic) | 6.8A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 3.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | 28ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | 270pF | |
| Gate Charge(Qg) | 15nC@400V | |
| Output Capacitance(Coes) | 21pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB-3 | |
| Td(off) | 87ns | |
| Pd - Power Dissipation | 25W | |
| Td(on) | 40ns | |
| Current - Collector(Ic) | 6.8A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 3.5pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.15V | |
| Reverse Recovery Time(trr) | 28ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 120uJ | |
| Turn-On Energy (Eon) | 140uJ | |
| Input Capacitance(Cies) | 270pF | |
| Gate Charge(Qg) | 15nC@400V | |
| Output Capacitance(Coes) | 21pF |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Ultra-fast characteristics: optimized for hard-switching operation up to 80kHz and resonant mode >200kHz
- 4th generation IGBT design: tighter parameter distribution and higher efficiency vs. previous generations
- Co-packaged IGBT with HEXFRED ultra-fast, ultra-soft recovery anti-parallel diode: suitable for bridge configurations
- Industry-standard TO-220 Full-Pak package
- Lead-free
C538087 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IKP04N60T | Infineon | TO-220-3 | 412 | $0.8518 $1.3963 | ||
| STGP4M65DF2 | ST | TO-220 | 49 | $ 2.0202 | ||
| IKP15N65F5 | Infineon | TO-220-3 | 5 | $ 1.9398 | ||
| IKP08N65H5 | Infineon | TO-220-3 | 402 | $ 1.9844 | ||
| IKP08N65F5 | Infineon | TO-220-3 | 346 | $ 1.8195 | ||
| STGP20V60DF | ST | TO-220 | 200 | $ 2.2222 | ||
| IRG4IBC30WPBF-INF | Infineon | TO-220 | 0 | $ 4.4916 | ||
| IRG4BC20UDPBF | Infineon | TO-220AB-3 | 0 | $ 1.3896 | ||
| IRG4BC30WPBF | Infineon | TO-220AB | 0 | $ 6.2516 | ||
| AOT10B60M1 | AOS | TO-220 | 0 | $ 1.1987 |