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Infineon IRFZ44ZSTRRPBF
| Manufacturer | |
| MPN | IRFZ44ZSTRRPBF |
| LCSC Part # | C538080 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 80W 55V 51A 4V 13.9mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IRFZ44ZSTRRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 240pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 51A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.42nF | |
| Gate Charge(Qg) | 43nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 240pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 51A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.42nF | |
| Gate Charge(Qg) | 43nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Introduction
AI Translation
This HEXFET power MOSFET utilizes the latest process technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this an extremely efficient and reliable device suitable for a wide range of applications.
Features
AI Translation
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.0462 | $ 3.05 |
| 10+ | $ 2.6856 | $ 26.86 |
| 30+ | $ 2.4597 | $ 73.79 |
| 100+ | $ 2.229 | $ 222.90 |
| 500+ | $ 2.1251 | $ 1062.55 |
| 800+ | $ 2.0796 | $ 1663.68 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 240pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 51A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.42nF | |
| Gate Charge(Qg) | 43nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 240pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 51A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.42nF | |
| Gate Charge(Qg) | 43nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This HEXFET power MOSFET utilizes the latest process technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this an extremely efficient and reliable device suitable for a wide range of applications.
Features
AI Translation
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free
C538080 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FH6880A | XIN FEI HONG | TO-263 | 458 | $ 0.3354 | ||
| HT65NF06ASZ | HTCSEMI | TO-263 | 12 | $0.3172 $0.6343 | ||
| AUIRFZ44ZS | Infineon | D2PAK | 0 | $ 0.8119 | ||
| AUIRFZ44ZSTRL | Infineon | D2PAK | 0 | $ 2.2628 | ||
| AUIRFZ44VZS | Infineon | D2PAK | 0 | $ 0.7749 | ||
| AUIRFZ44VZSTRL | Infineon | D2PAK | 0 | $ 2.9064 | ||
| FH1806B2 | XIN FEI HONG | TO-263 | 0 | $ 0.4542 | ||
| AUIRF1018ESTRL | Infineon | D2PAK | 0 | $ 3.3664 | ||
| AUIRFZ48ZSTRL | Infineon | D2PAK | 0 | $ 3.0947 | ||
| FDB2532-F085 | onsemi | TO-263-2 | 0 | $ 3.6403 |