Imágenes ilustrativas
Modelos EDAEasyEDA
Infineon IRFB3256PBF
| Fabricante | |
| N.º de pieza fab. | IRFB3256PBF |
| Nº LCSC | C537857 |
| Emb. | TO-220AB |
| Número de Cliente | |
| Atrib. clave | 300W 60V 206A 4V 3.4mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs |
| Hoja de Datos | Infineon IRFB3256PBF |
| Piezas alternativas | 9 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Output Capacitance(Coss) | 720pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 206A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.6nF | |
| Gate Charge(Qg) | 195nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Output Capacitance(Coss) | 720pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 206A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.6nF | |
| Gate Charge(Qg) | 195nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
Aplicaciones
Traducción por IA
- High-efficiency synchronous rectification in switching power supplies
- Uninterruptible power supplies
- High-speed power switching
- Hard-switching and high-frequency circuits
Agotado
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 3.4003 | $ 3.40 |
| 200+ | $ 1.3166 | $ 263.32 |
| 500+ | $ 1.2703 | $ 635.15 |
| 1,000+ | $ 1.2472 | $ 1247.20 |
Encapsulado Estándar1000/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Output Capacitance(Coss) | 720pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 206A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.6nF | |
| Gate Charge(Qg) | 195nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220AB | |
| Output Capacitance(Coss) | 720pF | |
| Pd - Power Dissipation | 300W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 206A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 3.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.6nF | |
| Gate Charge(Qg) | 195nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free
Aplicaciones
Traducción por IA
- High-efficiency synchronous rectification in switching power supplies
- Uninterruptible power supplies
- High-speed power switching
- Hard-switching and high-frequency circuits
C537857 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| IRFB3206PBF | Infineon | TO-220AB | 960 | $ 1.6667 | ||
| MS210N085FTD | MASPOWER | TO-220 | 20 | $ 1.0325 | ||
| HYG028N10NS1P | HUAYI | TO-220FB-3L | 314 | $ 1.2061 | ||
| FDP036N10A | onsemi | TO-220 | 78 | $ 6.0128 | ||
| IRFB3077PBF | Infineon | TO-220AB | 9,973 | $ 1.6749 | ||
| SE60210GA | SINO-IC | TO-220 | 80 | $ 0.8052 | ||
| NCE85H21C | NCE | TO-220 | 0 | $ 1.0346 | ||
| IRFB3206GPBF | Infineon | TO-220AB | 0 | $ 10.011 | ||
| HYG018N10NS1P | HUAYI | TO-220FB-3L | 0 | $ 1.7091 |