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Infineon IPL60R115CFD7
| Manufacturer | |
| MPN | IPL60R115CFD7 |
| LCSC Part # | C537022 |
| Packaging | VSON-4-EP(8.1x8.1) |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 14A VSON-4-EP(8.1x8.1) |
| Datasheet | Infineon IPL60R115CFD7 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 33pF | |
| Ciss-Input Capacitance | 1.752nF | |
| Pd - Power Dissipation | 124W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 616pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 33pF | |
| Ciss-Input Capacitance | 1.752nF | |
| Pd - Power Dissipation | 124W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 616pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge, best-in-class reverse recovery charge and improved turn off behavior CoolMOS CFD7 offers highest efficiency in resonant topologies. This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Features
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Ωrr)
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applications
- Soft Switching topologies
- Phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.4069 | $ 3.41 |
| 10+ | $ 3.3325 | $ 33.33 |
| 30+ | $ 3.2834 | $ 98.50 |
| 100+ | $ 3.2343 | $ 323.43 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 33pF | |
| Ciss-Input Capacitance | 1.752nF | |
| Pd - Power Dissipation | 124W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 616pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 33pF | |
| Ciss-Input Capacitance | 1.752nF | |
| Pd - Power Dissipation | 124W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 14A | |
| Reverse Transfer Capacitance (Crss) | 616pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge, best-in-class reverse recovery charge and improved turn off behavior CoolMOS CFD7 offers highest efficiency in resonant topologies. This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Features
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Ωrr)
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applications
- Soft Switching topologies
- Phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging
C537022 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IPL65R099C7 | Infineon | Similar | VSON-4-EP(8.1x8.1) | 16 | $ 10.182 | ||
| IPL60R125C7 | Infineon | Similar | VSON-4-EP(8.1x8.1) | 4 | $ 4.1266 | ||
| IPL60R065C7 | Infineon | Similar | VSON-4-EP(8.1x8.1) | 20 | $ 8.6528 | ||
| IPL60R185P7 | Infineon | Similar | VSON-4-EP(8.1x8.1) | 17 | $ 1.3567 | ||
| IPL60R199CP | Infineon | Similar | VSON-4-EP(8.1x8.1) | 182 | $ 4.3308 |