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ST STF8N60DM2
| Manufacturer | |
| MPN | STF8N60DM2 |
| LCSC Part # | C500993 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | 25W 600V 8A 4V 550mΩ@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs |
| Datasheet | ST STF8N60DM2 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.89pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 449pF | |
| Gate Charge(Qg) | 13.5nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.89pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 449pF | |
| Gate Charge(Qg) | 13.5nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This high-voltage N-channel power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It features ultra-low reverse recovery charge (Qrr) and reverse recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for high-efficiency converters with demanding requirements — ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- Fast recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9285 | $ 1.93 |
| 10+ | $ 1.7124 | $ 17.12 |
| 50+ | $ 1.5938 | $ 79.69 |
| 100+ | $ 1.4606 | $ 146.06 |
| 500+ | $ 1.4005 | $ 700.25 |
| 1,000+ | $ 1.3745 | $ 1374.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.89pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 449pF | |
| Gate Charge(Qg) | 13.5nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Output Capacitance(Coss) | 24pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.89pF | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 449pF | |
| Gate Charge(Qg) | 13.5nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This high-voltage N-channel power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It features ultra-low reverse recovery charge (Qrr) and reverse recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for high-efficiency converters with demanding requirements — ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- Fast recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
AI Translation
- Switching applications
C500993 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| STFH10N60M2 | ST | Similar | TO-220FP-3 | 23 | $ 2.6368 | ||
| STF10N60M2 | ST | Similar | TO-220FP | 418 | $ 1.0784 | ||
| STF12N60M2 | ST | Similar | TO-220FP | 20 | $ 2.1868 | ||
| TSF65R550 | Truesemi | Similar | TO-220F | 184 | $ 0.504 | ||
| WML10N65C4 | Wayon | Similar | TO-220F | 5 | $ 0.6409 |
5 more alternative parts.View all substitutes