ST STL7N60M2
| Manufacturer | |
| MPN | STL7N60M2 |
| LCSC Part # | C495244 |
| Packaging | PowerFLAT-12(5x5) |
| Customer # | |
| Key Attributes | 67W 600V 5A 2V 920mΩ@10V 1 N-channel N-Channel PowerFLAT-12(5x5) Single FETs, MOSFETs RoHS |
| Datasheet | ST STL7N60M2 |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-12(5x5) | |
| Output Capacitance(Coss) | 15.7pF | |
| Pd - Power Dissipation | 67W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 680fF | |
| RDS(on) | 920mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 271pF | |
| Gate Charge(Qg) | 8.8nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-12(5x5) | |
| Output Capacitance(Coss) | 15.7pF | |
| Pd - Power Dissipation | 67W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 680fF | |
| RDS(on) | 920mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 271pF | |
| Gate Charge(Qg) | 8.8nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. Featuring a stripe layout and improved vertical structure, it offers low on-resistance and optimized switching characteristics, making it well-suited for demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.3712 | $ 1.37 |
| 10+ | $ 1.1747 | $ 11.75 |
| 30+ | $ 1.0772 | $ 32.32 |
| 100+ | $ 0.9797 | $ 97.97 |
| 500+ | $ 0.9212 | $ 460.60 |
| 1,000+ | $ 0.892 | $ 892.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-12(5x5) | |
| Output Capacitance(Coss) | 15.7pF | |
| Pd - Power Dissipation | 67W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 680fF | |
| RDS(on) | 920mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 271pF | |
| Gate Charge(Qg) | 8.8nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-12(5x5) | |
| Output Capacitance(Coss) | 15.7pF | |
| Pd - Power Dissipation | 67W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 680fF | |
| RDS(on) | 920mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 271pF | |
| Gate Charge(Qg) | 8.8nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel power MOSFET developed using MDmesh™ M2 technology. Featuring a stripe layout and improved vertical structure, it offers low on-resistance and optimized switching characteristics, making it well-suited for demanding high-efficiency converters.
Features
AI Translation
- Ultra-low gate charge
- Excellent output capacitance (Coss) characteristics
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C495244 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



