DIODES DMPH6050SK3Q-13
| Hersteller | |
| Herst.-Teilenr. | DMPH6050SK3Q-13 |
| LCSC-Nr. | C461102 |
| Verp. | TO-252(DPAK) |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 23.6A TO-252(DPAK) |
| Datenblatt | |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternative Teile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.377nF | |
| Gate Charge(Qg) | 12nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.377nF | |
| Gate Charge(Qg) | 12nC |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Merkmale
KI-Übersetzung
- Rated to +175℃ – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
- Low Qg – Minimizes Switching Loss
- Low RDS(ON) – Minimizes On State Loss
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Anwendungen
KI-Übersetzung
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Vorrätig: 1,244
1,244 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6495 | $ 0.65 |
| 10+ | $ 0.5239 | $ 5.24 |
| 30+ | $ 0.4602 | $ 13.81 |
| 100+ | $ 0.3966 | $ 39.66 |
| 500+ | $ 0.359 | $ 179.50 |
| 1,000+ | $ 0.3395 | $ 339.50 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.377nF | |
| Gate Charge(Qg) | 12nC |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 3.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.377nF | |
| Gate Charge(Qg) | 12nC |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Merkmale
KI-Übersetzung
- Rated to +175℃ – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
- Low Qg – Minimizes Switching Loss
- Low RDS(ON) – Minimizes On State Loss
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Anwendungen
KI-Übersetzung
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
C461102 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DMPH6050SK3-13 | DIODES | TO-252(DPAK) | 1,305 | $ 0.9318 | ||
| VBZE20P06 | VBsemi Elec | TO-252 | 8 | $0.5048 $0.5938 | ||
| WSF35P10 | Winsok Semicon | TO-252 | 1,525 | $ 0.2119 | ||
| TPNCE01P30K | TECH PUBLIC | TO-252-3L | 4,648 | $0.5526 $0.6139 | ||
| SUD50P10-43L-TP | TECH PUBLIC | TO-252-3L | 1,419 | $ 0.3835 | ||
| SQD19P06-60L-GE3-VB | VBsemi Elec | TO-252 | 1,052 | $0.3598 $0.4232 | ||
| FR5505-VB | VBsemi Elec | TO-252 | 114 | $0.5504 $0.6475 | ||
| RJE0605JPD-00-J3-VB | VBsemi Elec | TO-252 | 34 | $0.5642 $0.6637 | ||
| VBE2658 | VBsemi Elec | TO-252 | 1 | $0.7143 $0.7518 | ||
| SUD50P10-43L-BE3 | VISHAY | TO-252 | 0 | $ 6.5991 |



