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ST STD35NF06T4
| Manufacturer | |
| MPN | STD35NF06T4 |
| LCSC Part # | C435949 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 35A DPAK |
| Datasheet | ST STD35NF06T4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 35A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is the latest development of unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Exceptional dv/dt capability
- Application oriented characterization
- 100% avalanche tested
Applications
AI Translation
- Switching application
In-Stock: 63
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0145 | $ 1.01 |
| 10+ | $ 0.8477 | $ 8.48 |
| 30+ | $ 0.7559 | $ 22.68 |
| 100+ | $ 0.6534 | $ 65.34 |
| 500+ | $ 0.6075 | $ 303.75 |
| 1,000+ | $ 0.5876 | $ 587.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 300pF | |
| Pd - Power Dissipation | 80W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 35A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET is the latest development of unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
AI Translation
- Exceptional dv/dt capability
- Application oriented characterization
- 100% avalanche tested
Applications
AI Translation
- Switching application
C435949 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFR2607ZTRPBF | Infineon | DPAK | 10 | $ 2.8204 | ||
| FDD86580-F085 | onsemi | DPAK(TO-252) | 47 | $0.4013 $1.433 | ||
| IRFR540ZTRPBF | Infineon | DPAK(TO-252AA) | 2,317 | $ 1.5373 | ||
| IRFR540ZTRLPBF | Infineon | DPAK | 782 | $ 0.9394 | ||
| FH1806D2 | XIN FEI HONG | TO-252 | 690 | $ 0.1763 | ||
| 65N06 | HL | TO-252-3L | 1,525 | $ 0.2299 | ||
| XR65N06 | XNRUSEMI | TO-252-3L | 1,480 | $0.1938 $0.2039 | ||
| STD35NF06LT4 | ST | DPAK | 86 | $ 1.9366 | ||
| JCS50N06RH | Jilin Sino-Microelectronics | DPAK | 0 | $ 0.3833 | ||
| FDD16AN08A0 | onsemi | TO-252(DPAK) | 0 | $ 3.9493 |