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Truesemi TSD5N60M

Manufacturer
TruesemiAsian Brands
MPN
TSD5N60M
LCSC Part #
C382368
Packaging
DPAK(TO-252)
Customer #
Key Attributes
MOSFET N-CH 600V 4.5A DPAK(TO-252)
DatasheetTruesemi TSD5N60M
RoHS Compliance1 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTruesemi
PackagingDPAK(TO-252)
Output Capacitance(Coss)55pF
Ciss-Input Capacitance560pF
Pd - Power Dissipation48W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)4.5A
Reverse Transfer Capacitance (Crss)7pF
RDS(on)2.5Ω@10V
Number1 N-channel
Gate Charge(Qg)12nC
Vgs±30V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Introduction

AI Translation

This Power MOSFET is produced using Truesemi's advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Features

AI Translation
  • 4.5A, 600V, Max.RDS(on)=2.5 Ω @ VGS =10V
  • Low gate charge(typical 12nC)
  • High ruggedness
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability