Infineon IPN60R1K5CEATMA1
| Manufacturer | |
| MPN | IPN60R1K5CEATMA1 |
| LCSC Part # | C3288802 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 5A SOT-223 |
| Datasheet | Infineon IPN60R1K5CEATMA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Features
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for standard grade applications
Applications
- Adapter
- Charger
- Lighting
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5693 | $ 0.57 |
| 10+ | $ 0.4495 | $ 4.50 |
| 30+ | $ 0.3987 | $ 11.96 |
| 100+ | $ 0.3347 | $ 33.47 |
| 500+ | $ 0.3068 | $ 153.40 |
| 1,000+ | $ 0.2888 | $ 288.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Features
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for standard grade applications
Applications
- Adapter
- Charger
- Lighting
C3288802 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPN60R1K0CE | Infineon | SOT-223 | 100 | $ 0.5524 | ||
| IPN50R1K4CE | Infineon | SOT-223-3 | 10 | $ 0.4338 | ||
| IPN70R600P7SATMA1 | Infineon | SOT-223 | 161 | $ 0.5891 | ||
| IPN70R900P7S | Infineon | SOT-223 | 442 | $ 0.6965 | ||
| IPN60R600P7S | Infineon | SOT-223 | 56 | $ 0.5578 | ||
| IPN70R750P7SATMA1 | Infineon | SOT-223 | 228 | $ 1.2201 | ||
| IPN70R1K5CE | Infineon | SOT-223 | 0 | $ 0.7807 | ||
| SP001434884 | Infineon | SOT-223 | 0 | $ 0.2098 | ||
| IPN95R1K2P7 | Infineon | SOT-223 | 0 | $ 2.1917 | ||
| IPN60R360P7S | Infineon | SOT-223-3 | 0 | $ 0.8601 |



