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AOS AOT254L
| Manufacturer | |
| MPN | AOT254L |
| LCSC Part # | C3280433 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 150V 2.7V 46mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet | AOS AOT254L |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 4.2A;32A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 2.1W;125W | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 40nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 4.2A;32A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 2.1W;125W | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 40nC@10V |
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Features
AI Translation
- Thermal resistance R<sub>θJA</sub> measured with device mounted on a 1 in², 2 oz copper FR-4 board in still air (T<sub>A</sub> = 25°C). P<sub>DSM</sub> based on R<sub>θJA</sub> and maximum allowable junction temperature of 150°C. Actual value depends on specific PCB design; temperatures up to 175°C may be used if the PCB permits.
- P<sub>D</sub> based on T<sub>J(MAX)</sub> = 175°C using junction-to-case thermal resistance; more useful for setting maximum power dissipation limits when additional heatsinking is employed.
- Repetitive rating; pulse width limited by junction temperature T<sub>J(MAX)</sub> = 175°C. Ratings based on low frequency and duty cycle to maintain initial T<sub>J</sub> = 25°C.
- R<sub>θJA</sub> is the sum of junction-to-case thermal resistance R<sub>θJC</sub> and case-to-ambient thermal resistance.
- Static characteristics in Figures 1 through 6 obtained using pulses of less than 300 µs with a maximum duty cycle of 0.5%.
- Curves based on junction-to-case thermal impedance measured with device mounted on a large heatsink, assuming T<sub>J(MAX)</sub> = 175°C. SOA curves provide single-pulse ratings.
- Maximum current rating is package limited.
- Tests performed with device mounted on a 1 in², 2 oz copper FR-4 board in still air (T<sub>A</sub> = 25°C).
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.057 | $ 1.06 |
| 200+ | $ 0.4089 | $ 81.78 |
| 500+ | $ 0.3951 | $ 197.55 |
| 1,000+ | $ 0.3889 | $ 388.90 |
Standard Packaging1000/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 4.2A;32A | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 2.1W;125W | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 40nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 4.2A;32A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Pd - Power Dissipation | 2.1W;125W | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 40nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Thermal resistance R<sub>θJA</sub> measured with device mounted on a 1 in², 2 oz copper FR-4 board in still air (T<sub>A</sub> = 25°C). P<sub>DSM</sub> based on R<sub>θJA</sub> and maximum allowable junction temperature of 150°C. Actual value depends on specific PCB design; temperatures up to 175°C may be used if the PCB permits.
- P<sub>D</sub> based on T<sub>J(MAX)</sub> = 175°C using junction-to-case thermal resistance; more useful for setting maximum power dissipation limits when additional heatsinking is employed.
- Repetitive rating; pulse width limited by junction temperature T<sub>J(MAX)</sub> = 175°C. Ratings based on low frequency and duty cycle to maintain initial T<sub>J</sub> = 25°C.
- R<sub>θJA</sub> is the sum of junction-to-case thermal resistance R<sub>θJC</sub> and case-to-ambient thermal resistance.
- Static characteristics in Figures 1 through 6 obtained using pulses of less than 300 µs with a maximum duty cycle of 0.5%.
- Curves based on junction-to-case thermal impedance measured with device mounted on a large heatsink, assuming T<sub>J(MAX)</sub> = 175°C. SOA curves provide single-pulse ratings.
- Maximum current rating is package limited.
- Tests performed with device mounted on a 1 in², 2 oz copper FR-4 board in still air (T<sub>A</sub> = 25°C).
C3280433 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSP30N15A | HUASHUO | TO-220 | 123 | $ 0.6114 | ||
| NPS50N20C | NH | TO-220C | 73 | $ 0.4854 | ||
| NPS40N20C | NH | TO-220C | 100 | $ 0.3747 | ||
| SP40N20TQ | Siliup | TO-220-3L-C | 455 | $ 0.7252 | ||
| HYG400N15NS1P | HUAYI | TO-220FB-3L | 9 | $ 0.5263 | ||
| SP45N20TQ | Siliup | TO-220-3L | 116 | $ 0.7987 | ||
| AOT2500L | AOS | TO-220 | 0 | $ 2.9234 | ||
| FDP42AN15A0 | onsemi | TO-220 | 0 | $ 2.8366 | ||
| VBM1154N | VBsemi Elec | TO-220AB | 0 | $1.8555 $1.9531 | ||
| IRFB33N15DPBF | Infineon | TO-220AB | 0 | $ 3.3354 |