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onsemi NXH350N100H4Q2F2S1G
| Manufacturer | |
| MPN | NXH350N100H4Q2F2S1G |
| LCSC Part # | C3198345 |
| Packaging | Q2PACK-42(47x93) |
| Customer # | |
| Key Attributes | SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode |
| Datasheet | onsemi NXH350N100H4Q2F2S1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | onsemi | |
| Packaging | Q2PACK-42(47x93) | |
| Td(off) | 319ns;423ns | |
| Pd - Power Dissipation | 276W | |
| Td(on) | 85ns;70ns | |
| Current - Collector(Ic) | 303A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV | |
| Reverse Transfer Capacitance (Cres) | 106pF;104pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.84V;5V | |
| Gate Charge(Qg) | 1.249uC@600V;1.304uC@600V | |
| Vce Saturation(VCE(sat)) | 1.63V;1.75V | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 4.9mJ;4.2mJ | |
| Turn-On Energy (Eon) | 2.5mJ;6.4mJ | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 24.146nF@20V | |
| Output Capacitance(Coes) | 1.027nF;1.012nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | onsemi | |
| Packaging | Q2PACK-42(47x93) | |
| Td(off) | 319ns;423ns | |
| Pd - Power Dissipation | 276W | |
| Td(on) | 85ns;70ns | |
| Current - Collector(Ic) | 303A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV | |
| Reverse Transfer Capacitance (Cres) | 106pF;104pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.84V;5V | |
| Gate Charge(Qg) | 1.249uC@600V;1.304uC@600V | |
| Vce Saturation(VCE(sat)) | 1.63V;1.75V | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 4.9mJ;4.2mJ | |
| Turn-On Energy (Eon) | 2.5mJ;6.4mJ | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 24.146nF@20V | |
| Output Capacitance(Coes) | 1.027nF;1.012nF |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 383.6182 | $ 383.62 |
| 216+ | $ 148.4549 | $ 32066.26 |
| 504+ | $ 143.2388 | $ 72192.36 |
| 1,008+ | $ 140.66 | $ 141785.28 |
Standard Packaging36/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | onsemi | |
| Packaging | Q2PACK-42(47x93) | |
| Td(off) | 319ns;423ns | |
| Pd - Power Dissipation | 276W | |
| Td(on) | 85ns;70ns | |
| Current - Collector(Ic) | 303A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV | |
| Reverse Transfer Capacitance (Cres) | 106pF;104pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.84V;5V | |
| Gate Charge(Qg) | 1.249uC@600V;1.304uC@600V | |
| Vce Saturation(VCE(sat)) | 1.63V;1.75V | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 4.9mJ;4.2mJ | |
| Turn-On Energy (Eon) | 2.5mJ;6.4mJ | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 24.146nF@20V | |
| Output Capacitance(Coes) | 1.027nF;1.012nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | onsemi | |
| Packaging | Q2PACK-42(47x93) | |
| Td(off) | 319ns;423ns | |
| Pd - Power Dissipation | 276W | |
| Td(on) | 85ns;70ns | |
| Current - Collector(Ic) | 303A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1kV | |
| Reverse Transfer Capacitance (Cres) | 106pF;104pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.84V;5V | |
| Gate Charge(Qg) | 1.249uC@600V;1.304uC@600V | |
| Vce Saturation(VCE(sat)) | 1.63V;1.75V | |
| Reverse Recovery Time(trr) | 105ns | |
| Switching Energy(Eoff) | 4.9mJ;4.2mJ | |
| Turn-On Energy (Eon) | 2.5mJ;6.4mJ | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 24.146nF@20V | |
| Output Capacitance(Coes) | 1.027nF;1.012nF |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NXH350N100H4Q2F2P1G | onsemi | Q2PACK-42(47x93) | 0 | $ 374.676 |