MACOM MRF314
| Manufacturer | |
| MPN | MRF314 |
| LCSC Part # | C3198162 |
| Packaging | - |
| Customer # | |
| Key Attributes | 35V 20 3.4A NPN Bipolar RF Transistors RoHS |
| Datasheet | MACOM MRF314 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 35V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 3.4A | |
| Transition frequency(fT) | - | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 35V | |
| DC Current Gain | 20 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 3.4A | |
| Transition frequency(fT) | - | |
| type | NPN |
Introduction
This RF NPN silicon power transistor is primarily designed for wideband large-signal driver and output amplifier stages in the 30–200 MHz frequency range. Performance is guaranteed at 150 MHz under 28 V DC conditions. Output power = 30 W, minimum gain = 10 dB. 100% tested for load mismatch at 30:1 VSWR across all phase angles. Features a gold metallization system for high-reliability applications.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 39.0911 | $ 39.09 |
| 200+ | $ 15.1285 | $ 3025.70 |
| 500+ | $ 14.5958 | $ 7297.90 |
| 1,000+ | $ 14.3342 | $ 14334.20 |
Standard Packaging20/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 35V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 3.4A | |
| Transition frequency(fT) | - | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 35V | |
| DC Current Gain | 20 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 3.4A | |
| Transition frequency(fT) | - | |
| type | NPN |
Introduction
This RF NPN silicon power transistor is primarily designed for wideband large-signal driver and output amplifier stages in the 30–200 MHz frequency range. Performance is guaranteed at 150 MHz under 28 V DC conditions. Output power = 30 W, minimum gain = 10 dB. 100% tested for load mismatch at 30:1 VSWR across all phase angles. Features a gold metallization system for high-reliability applications.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |