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VISHAY IRFU9024PBF
| Producent | |
| Nr części prod. | IRFU9024PBF |
| Nr LCSC | C3033 |
| Opak. | TO-251(IPAK) |
| Numer Klienta | |
| Klucz. cechy | P-Channel, Current: -5.6A, Voltage: 60V |
| Karta Katalogowa |  VISHAY IRFU9024PBF |
| Zgodność z dyrektywą RoHS | Dostępnych dokumentów: 2 |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
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Opis
Tłumaczenie AI
The third generation power MOSFETs provide designers with an excellent combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. Straight lead versions (IRFU, SiHFU series) are available for through-hole mounting applications. In typical SMT applications, power dissipation levels up to 1.5 W can be achieved.
Funkcje
Tłumaczenie AI
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Surface mount (IRFR9024, SiHFR9024)
- Straight lead (IRFU9024, SiHFU9024)
- Tape and reel option available
- P-channel
- Fast switching
- RoHS compliant
- Halogen-free
- In stock
Na stanie: 9
9 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.8018 | $ 1.80 |
| 10+ | $ 1.7774 | $ 17.77 |
| 30+ | $ 1.7611 | $ 52.83 |
| 75+ | $ 1.7433 | $ 130.75 |
Standardowa Obudowa75/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 570pF | |
| Gate Charge(Qg) | 19nC@10V | |
| Type | P-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The third generation power MOSFETs provide designers with an excellent combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The DPAK package is designed for SMT using vapor phase, infrared, or wave soldering techniques. Straight lead versions (IRFU, SiHFU series) are available for through-hole mounting applications. In typical SMT applications, power dissipation levels up to 1.5 W can be achieved.
Funkcje
Tłumaczenie AI
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Surface mount (IRFR9024, SiHFR9024)
- Straight lead (IRFU9024, SiHFU9024)
- Tape and reel option available
- P-channel
- Fast switching
- RoHS compliant
- Halogen-free
- In stock
C3033 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IRFU9024NPBF | Infineon | TO-251(IPAK) | 1,503 | $ 0.4411 | ||
| CMU12P10S | Cmos | TO-251 | 40 | $0.2245 $0.2363 | ||
| IRFU5410PBF | Infineon | TO-251(IPAK) | 38 | $ 0.6087 | ||
| CMU5941 | Cmos | TO-251 | 5 | $0.2617 $0.2754 | ||
| CMU5950A | Cmos | TO-251 | 4 | $0.3881 $0.4085 | ||
| 12P10L-TM3-T | UTC | TO-251D-3 | 0 | $ 0.3248 | ||
| SFU9034TU | onsemi | IPAK | 0 | $ 0.265 | ||
| SFU9130TU | onsemi | IPAK | 0 | $ 0.3478 | ||
| TSM680P06CH X0G | Taiwan Semiconductor | TO-251(IPAK) | 0 | $ 0.3336 | ||
| NTD2955-1G | onsemi | TO-251(IPAK) | 0 | $ 1.1795 |