Infineon/CYPRESS CY62148DV30LL-55ZSXI

The CY62148DV30 is a high-performance CMOS static random access memory organized as 512K words × 8 bits. The device utilizes advanced circuit design to deliver ultra-low operating current, making it ideal for extending battery life in portable applications such as mobile phones. The device also features automatic power-down capability to significantly reduce power consumption. When deselected (CE HIGH), the device enters standby mode to reduce power consumption. The eight input/output pins (IO₀–IO₇) are in a high-impedance state under the following conditions: deselected (CE HIGH); output disabled (OE HIGH); write operation active (CE LOW and WE LOW). Data is written to the device by driving the chip enable (CE) and write enable (WE) inputs LOW. In this case, data on the eight IO pins (IO₀–IO₇) is written to the location specified by the address pins (A₀–A₁₈). Data is read from the device by driving chip enable (CE) and output enable (OE) LOW while write enable (WE) is HIGH. Under these conditions, the contents of the memory cell specified by the address pins appear on the IO pins.

• Temperature range: Industrial: -40°C to 85°C; Automotive Grade-A: -40°C to 85°C
• High speed: 55 ns
• Wide voltage range: 2.20V ~ 3.60V
• Pin-compatible with CY62148CV25, CY62148CV30, and CY62148CV33
• Ultra-low active power
• Typical active current: 1.5 mA @ f = 1 MHz
• Typical active current: 8 mA @ f = fmax (55 ns speed)
• Ultra-low standby power
• Easy memory expansion with CE and OE
• Automatic power-down on deselection
• Available in lead-free and non-lead-free 36-ball VFBGA, lead-free 32-pin TSOPII, and 32-pin SOIC packages

• Portable applications
• Mobile phones