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Jingdao Microelectronics G1004DY
| Fabricante | Jingdao MicroelectronicsAsian Brands |
| N.º de pieza fab. | G1004DY |
| Nº LCSC | C2935486 |
| Emb. | TO-252 |
| Número de Cliente | |
| Atrib. clave | Diode 400V 10A TO-252 |
| Hoja de Datos | Jingdao Microelectronics G1004DY |
| Piezas alternativas | 6 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Jingdao Microelectronics | |
| Emb. | TO-252 | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@10A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 10A | |
| Non-Repetitive Peak Forward Surge Current | 180A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Jingdao Microelectronics | |
| Emb. | TO-252 | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Tipo | Descripción | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@10A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 10A | |
| Non-Repetitive Peak Forward Surge Current | 180A |
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En stock: 2,415
2,415 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.145 | $ 0.73 |
| 50+ | $ 0.1156 | $ 5.78 |
| 150+ | $ 0.1009 | $ 15.14 |
| 500+ | $ 0.0899 | $ 44.95 |
| 2,500+ | $ 0.081 | $ 202.50 |
| 5,000+ | $ 0.0766 | $ 383.00 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Jingdao Microelectronics | |
| Emb. | TO-252 | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@10A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 10A | |
| Non-Repetitive Peak Forward Surge Current | 180A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | Jingdao Microelectronics | |
| Emb. | TO-252 | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Tipo | Descripción | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@10A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 10A | |
| Non-Repetitive Peak Forward Surge Current | 180A |
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Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| SF1004DY | Jingdao Microelectronics | TO-252 | 640 | $ 0.1273 | ||
| SF1005DY | Jingdao Microelectronics | TO-252 | 2,470 | $ 0.1127 | ||
| SF1005DS | Jingdao Microelectronics | TO-252-2 | 1,020 | $ 0.1196 | ||
| SF1006DY | Jingdao Microelectronics | TO-252 | 535 | $ 0.1027 | ||
| SF1006DYC | Jingdao Microelectronics | TO-252 | 880 | $ 0.1531 | ||
| SF1008DY | Jingdao Microelectronics | TO-252 | 0 | $ 0.1525 |